Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Hexagon-channel silicon light conduction pipe

A hexagonal and channel technology, applied in the field of silicon light guides, can solve the problems of unreachable light transmission and achieve ideal transmission effects

Active Publication Date: 2016-09-21
WUXI HI NANO TECH
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there is still a large distance between the regular quadrilateral and the circle, and the light transmission cannot achieve the ideal effect.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Hexagon-channel silicon light conduction pipe
  • Hexagon-channel silicon light conduction pipe
  • Hexagon-channel silicon light conduction pipe

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0019] figure 1 It is a structural representation of the present invention. Such as figure 1 As shown, the present invention includes a silicon-based substrate 1 . A first silicon oxide layer 2 is epitaxially formed on the silicon base substrate 1 . A silicon region 4 with a regular hexagonal cross-section grows on the first silicon oxide layer 2 . The bottom edge of the silicon region 4 coincides with the surface of the first silicon oxide layer 2 . Bounded by the central axis in the horizontal direction of the regular hexagonal cross-section of the silicon region 4, a second silicon oxide layer 3 is wrapped around the silicon region 4 between the central axis and the first silicon oxide layer 2, On the second silicon oxide layer 3 , a third silicon oxide layer 5 is wrapped around the silicon region 4 . The length of the diagonal of the cross section of the silicon region 4 is 1 μm to 3 μm. In this embodiment, the silicon oxide layer mentioned above refers to the dioxid...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a hexagon-channel silicon light conduction pipe, which comprises a silicon-based substrate. A first silicon oxide layer is epitaxially formed on the silicon-based substrate; a silicon region, the cross section of which is orthohexagonal, grows on the first silicon oxide layer; the bottom edge of the silicon region is overlapped with the surface of the first silicon oxide layer; with the central axis in the horizontal direction of the orthohexagonal cross section of the silicon region being a boundary, a second silicon oxide layer is arranged between the central axis and the first silicon oxide layer and wrapped outside the silicon region, and a third silicon oxide layer is arranged on the second silicon oxide layer and wrapped outside the silicon region; and the diagonal line of the cross section of the silicon region is 1-3 mum in length. A light conduction channel is orthohexagonal; and according to the basic mathematical knowledge, compared with a square light conduction channel, the orthohexagonal light conduction channel is closer to an ideal light conduction channel, the cross section of which is circular, and thus conduction effect is more ideal.

Description

technical field [0001] The invention relates to a silicon light guide, in particular to a silicon light guide with a hexagonal channel. Background technique [0002] The refractive index of light in silicon is 3.42, while the refractive index of light in silicon dioxide is between 1.4 and 1.5. According to the basic refraction principle of light, if light is transmitted in silicon, and silicon and silicon dioxide form a At the contact surface, light is transmitted in the silicon and is totally reflected by the contact surface of silicon and silicon dioxide. So if there is a structure in which silicon dioxide completely wraps silicon, light can be transmitted in silicon without escaping. [0003] The cross-section of the silicon structure in the silicon light guide in the prior art is a regular quadrilateral. According to the mode of light transmission, it can be seen that when the cross section of the light channel is circular, the best transmission effect can be achieved....

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G02B6/00
CPCG02B6/0096
Inventor 吕耀安
Owner WUXI HI NANO TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products