Device and method for growing silicon carbide crystals by liquid phase method
A kind of silicon carbide, liquid phase method
Active Publication Date: 2018-04-10
SICC CO LTD
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Problems solved by technology
Therefore, simply increasing the pressure of the growth chamber is not suitable for industrial production.
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[0023] The present invention will be further described below through specific embodiments in conjunction with the accompanying drawings.
[0024] as attached figure 1 As shown, a device for growing silicon carbide crystals by a liquid phase method includes a graphite crucible, a seed crystal shaft, and the seed crystal shaft is connected with the up and down movement mechanism of the crystal growth furnace (the up and down movement mechanism is not shown in the figure, which is a prior art ). The graphite crucible includes a crucible body 3, a crucible lid 1 covered on the upper end of the crucible body 3, the crucible lid 1 has openings, the outer body of the crucible is provided with an insulation layer 4, and the crucible lid 1 is provided with an insulation upper cover 8. On the inner side wall of the upper end of the crucible body 3, corresponding to the gap between the crucible body 3 and the crucible cover 1, there is a ring groove 2 arranged along the inner side wall ...
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The invention discloses a device and a method of growing silicon carbide crystals through a liquid phase method. The device comprises a graphite crucible and a seed crystal shaft connected with an up-down movement mechanism, a heat insulating layer is arranged outside the graphite crucible which comprises a crucible body and a crucible cover covering the upper end of the same, and the seed crystal shaft comprises a graphite shaft with seed crystals pasted at the head. The device is characterized in that an annular groove formed along the periphery of the inner side wall of the crucible body is arranged at a position, corresponding to a gap between the crucible body and the crucible cover, of the inner side wall of the upper end of the crucible body, an opening of the annular groove is upward, the inner lateral side of the annular groove and the inner sidewall of the crucible body are in airtight connection, and the gap between the crucible body and the crucible cover is positioned in the annular groove; a graphite cover is coaxially arranged on the graphite shaft on the upper portions of the seed crystals, and is of a round flat plate structure or an umbrella-shaped structure with a downward opening or a cylindrical structure with one end closed and a downward opening at the other end, and the graphite cover covers the graphite shaft at one end pasted with the seed crystals below.
Description
technical field [0001] The invention relates to a device for growing silicon carbide crystals by a liquid phase method, belonging to the technical field of silicon carbide production. The invention also relates to a method for producing silicon carbide crystals using the device. Background technique [0002] The existing liquid phase method for growing silicon carbide crystals is to melt silicon in a high-purity graphite crucible by heating to form a solution of carbon in silicon, and then extend the graphite shaft with a seed crystal on the head into the grow in solution. The graphite crucible is an open design and is wrapped with insulation material. On the top of the crucible, there is an opening of a certain size, so that the axis of the seed crystal can extend from the top of the crucible into the solution in the crucible, and the size of the opening is determined by the crystal to be grown. The larger the size of the growing crystal, the larger the size of the cruci...
Claims
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IPC IPC(8): C30B29/36C30B15/00
CPCC30B15/00C30B29/36
Inventor 朱灿李斌李加林
Owner SICC CO LTD