A method for reducing the surface roughness of a wafer
A surface roughness, wafer technology, applied in the direction of grinding machine tools, metal processing equipment, electrical components, etc., can solve the problem of reducing roughness, achieve low Ra value and Rt value, and avoid mechanical pressure damage to the wafer Accidents, the effect of safeguarding interests
Active Publication Date: 2020-03-27
ACM RES SHANGHAI
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Problems solved by technology
However, according to the existing technology, it cannot be expected to continue to perform CMP polishing on the wafer for a long time to achieve the purpose of reducing the roughness when the surface film layer 201 only remains with a thickness of 2000 Å.
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no. 2 Embodiment approach
[0037] Figure 5 Shown is the situation when the method in the application of the present invention is applied to a patterned wafer. The wafer includes a copper film 501 and a base 502 , and the base 502 is provided with patterned wire grooves, and the patterned wire grooves are filled with the copper film 501 . Figure 5 Figure (a) in the middle shows a schematic diagram of the state of the wafer before receiving CMP grinding, while Figure 5 Figure (b) in the middle shows a schematic diagram of the state of the wafer after it has been polished by CMP.
[0038] The CMP process in the second specific embodiment includes start-up process, main grinding process, edge polishing process and deionized water cleaning process, its initial surface roughness Ra1=30 Å, expected surface roughness Ra2=10 Å, deionized water cleaning The grinding rate in the process is RR=5 Å / s, then according to the formula △T=6*(Ra1-Ra2) / RR=6*(30-10) / 5=24s. That is to say, in the deionized water cleani...
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Abstract
The invention relates to the production and manufacturing field of the semiconductor, particularly to a method for reducing the surface roughness of a wafer. The method comprises a chemical-mechanical grinding process including at least a main grinding procedure and a deionized water cleaning procedure. Grinding is carried out on the wafer by using a chemical agent with grinding particles as grinding fluid in the main grinding procedure; and a down force employed by the deionized water cleaning procedure is identical with the down force employed by the main grinding procedure, so that the wafer having the surface roughness meeting the standard is obtained. The initial average roughness of the wafer is Ra1; and an expected average roughness of the wafer after chemical-mechanical grinding is Ra2. At the deionized water cleaning procedure, the wafer is ground continuously by using deionized water as grinding liquid, wherein the grinding rate for grinding on the wafer by using the deionized water as grinding liquid is RR and time deltaT for grinding the wafer at the deionized water cleaning procedure meets a formula: deltaT= 6*(Ra1-Ra2) / RR.
Description
technical field [0001] The invention relates to the field of semiconductor production and processing, in particular to a method for reducing the surface roughness of a wafer during CMP grinding. Background technique [0002] The semiconductor integrated circuit industry has developed to a new stage. With the reduction of integrated circuit feature size, the introduction of low-k dielectric and the increase of wafer size, how to ensure the completion of large-scale copper interconnection planarization under low voltage conditions has become a The key to the development of integrated circuit manufacturing process. [0003] The chemical mechanical polishing process (CMP process) and the stress-free polishing process (SFP process) have their own advantages in planarizing the wafer, and they can cooperate with each other to achieve a better planarization effect. Wafers with a thickness of 10,000 Å are usually polished by a combination of CMP and SFP processes. First, most of the...
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IPC IPC(8): H01L21/304B24B37/04
Inventor 杨贵璞王坚王晖
Owner ACM RES SHANGHAI