A method of fabricating a trench gate device

Abstract

The invention discloses a manufacturing method of a trench gate device. The stepwise etching technology is adopted to form a partially etched trench gate region and a completely etched isolation region which are communicated, filling of isolation material is performed, and then trench gates are formed by the mode of in-situ defining the trench gate region again so that an original residual silicon electric leakage path existing between the trench gates and the isolation region can be completely eliminated, electric leakage between the source and the drain can be reduced, simultaneous etching of the trench gate region and the isolation region can be realized and the method is compatible with the original trench gate manufacturing technology.

Description

technical field [0001] The invention relates to the technical field of semiconductor device processing, and more particularly, to a method for manufacturing a novel trench gate device. Background technique [0002] As one of the basic core chips, memory has been widely used in various electronic products. Among them, the nonvolatile memory (Nonvolatile memory, NVM) can maintain the data state for a long time even in the case of power failure, without loss. With the continuous development of the size of semiconductor process technology in the direction of small size, planar non-volatile memory has bottlenecks in the continuous reduction of memory cell area and leakage, and also encountered challenges in device performance. The proposal and actual development and use of trench gate non-volatile memory have found a corresponding solution, but a practical problem has been encountered in the trench gate manufacturing process of the current conventional process: the source and dr...

AI Technical Summary

Problems solved by technology

The proposal and actual development and use of trench gate non-volatile memory have found a corresponding solution, but a practical problem has been encountered in the trench gate manufacturing process of the current conventional process: the source and drain of the device are due to the existence of The leakage channel formed by the residual silicon causes the degradation of device performance, which needs to be solved by adding subsequent processes

[0005] like Figure 1b As shown, it shows the cross-sectional structure of the trench gate device along the channel direction, the trench gate device formed after the implementation of the existing isolation process technology, the isolation region 101 between the source region and the drain region 102, the trench gate 103 and At the junction of the channel 104, there is a leakage channel 104' formed by residual silicon after the isolation process. The existence of this channel will cause leakage between the source region and the drain region 102, which will reduce the performance of the trench gate device or can not work

Images