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Array substrate and preparation method thereof

An array substrate and a substrate technology are applied in the field of array substrates and their preparation, and can solve problems such as poor device packaging.

Active Publication Date: 2016-10-12
CHENGDU VISTAR OPTEOLECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] Based on this, it is necessary to provide an array substrate and its preparation method for the problem that the traditional array substrate is easy to cause poor device packaging.

Method used

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  • Array substrate and preparation method thereof
  • Array substrate and preparation method thereof

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Embodiment Construction

[0031] In order to make the technical solution of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0032] First of all, it should be noted that the substrate used in the method for preparing the array substrate of the present invention may be a glass substrate, a thin metal substrate, or a flexible plastic substrate.

[0033] see figure 1 with figure 2 , as a specific embodiment of the array substrate preparation method of the present invention, it first includes step S100, depositing an amorphous silicon film layer 120 with a preset thickness on the surface of the substrate 110 by a coating process. Wherein, the coating process adopted can be physical vapor deposition or chemical vapor deposition, which can be freely selected according to the actual situation. At the same time, before depositing the amorphous silicon film layer 120 with a preset thickness...

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Abstract

The invention discloses an array substrate and a preparation method thereof. The method comprises the following steps that an amorphous silicon film layer of preset thickness is deposited on the surface of a substrate through a coating process; the substrate where the amorphous silicon film layer is deposited is subjected to edge exposure, and the portion, located in an edge film thickness transition area at the edge position of the surface of the substrate, of the amorphous silicon film layer is removed through an etching process; a crystallization process is carried out on the amorphous silicon film layer, and the amorphous silicon film layer is converted into a polycrystalline silicon film layer. Thus, the problem that a traditional substrate is poor in subsequent packaging due to the fact that the thickness of a polycrystalline silicon film layer on the edge of the surface of the substrate is uneven is solved.

Description

technical field [0001] The present invention relates to the technical field of semiconductors, in particular to an array substrate and a preparation method thereof. Background technique [0002] At present, when preparing substrates (such as low-temperature polysilicon substrates), in order to obtain the maximum number of surfaces, the UV (Ultraviolet Rays, shadowless glue) sealing area is usually arranged in the non-film-forming guaranteed area on the edge of the substrate. However, since the silicon thin film deposited on the surface of the substrate is formed into a film, the thickness of the silicon thin film at the edge of the substrate generally gradually transitions from zero to the target thickness. That is, the thickness of the film deposited on the surface of the substrate is not uniform between the non-film-forming-guaranteed area and the film-forming-guaranteed area at the edge of the substrate, but gradually increases to the target thickness. Therefore, when th...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/77G03F7/20G03F7/00H01L21/306H01L21/3065H01L27/12
CPCG03F7/00G03F7/20H01L21/30608H01L21/3065H01L21/77H01L27/12
Inventor 杜哲蔡伟民周衍旭
Owner CHENGDU VISTAR OPTEOLECTRONICS CO LTD
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