Semiconductor device

Abstract

A semiconductor device includes first and second transistors connected to the same power supply. Each of the first and second transistors includes, under a channel region of a low concentration provided between a source region and a drain region of a first conductivity type, an impurity region of a second conductivity type having a higher concentration. The thickness of the gate insulating film in one of the first and second transistors is made larger than the thickness of the gate insulating film in the other one.

Description

technical field [0001] Embodiments discussed herein relate to a semiconductor device. Background technique [0002] A technique is known in which a transistor group is used for an internal circuit and a power supply protection circuit to operate a group of MOS (Metal Oxide Semiconductor) type field effect transistors having gates of different thicknesses with the same power supply voltage. electrode insulating film, have different threshold voltages controlled by the impurity concentration in the channel region directly under the gate insulating film, and have different off-state currents. [0003] Also, for a MOS type field effect transistor, a technique is known by forming a channel region that is not doped or has a very low impurity concentration and disposing an impurity concentration higher than that of the channel region under such a channel region. area to control the threshold voltage technique. This technique is expected to be a technique that suppresses variation...

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Problems solved by technology

In this case, since the subthreshold leakage current and the junction leakage current vary depending on the concentration of the impurity region, there is a possibility that the off-state current including the sum of these two leakage currents cannot be suppressed low as a result

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