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A Replacement Method for Dead Pixel Units in Non-Volatile Memory

A storage unit, non-volatile technology, applied in static memory, instruments, etc., can solve problems such as data reading errors, reducing the service life of non-volatile memory, storage unit threshold voltage drift, etc., to avoid working performance effect of influence

Active Publication Date: 2019-10-18
GIGADEVICE SEMICON (BEIJING) INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In the actual use of non-volatile memory products, due to the existence of process uniformity or other defects, a small number of storage cells in non-volatile memory will be affected by the programming or erasing of adjacent storage cells, so that these storage The threshold voltage of the cell drifts
The storage cells whose threshold voltage drifts are called dead cells, and when these bad cells are read, there will be data reading errors, which will affect the product performance of the non-volatile memory; in addition, the generated Dead cells also reduce the lifetime of non-volatile memory

Method used

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  • A Replacement Method for Dead Pixel Units in Non-Volatile Memory
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  • A Replacement Method for Dead Pixel Units in Non-Volatile Memory

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Embodiment 1

[0041] figure 2 A schematic flow chart of a method for replacing dead cells in a non-volatile memory provided by Embodiment 1 of the present invention, as shown in figure 2 As shown, the method for replacing a bad pixel unit in a non-volatile memory provided by Embodiment 1 of the present invention specifically includes the following operations:

[0042] It should be noted that, since the programming operation is performed in units of storage pages, and after the programming operation of the current programming page is completed, the programming operation will be performed on the next page to be programmed, and the setting between two adjacent programming operations The time interval is short. If after each programming operation, detection and replacement of bad pixel cells are performed on other memory pages that have not been programmed, and then the programming operation is started on the next page to be programmed, the gap between two adjacent programming operations wil...

Embodiment 2

[0054] Figure 3a It is a schematic flow chart of a method for replacing dead cells in a non-volatile memory provided by Embodiment 2 of the present invention. Embodiment 2 of the present invention is optimized on the basis of the above embodiments. In this embodiment, the specific optimization of "performing dead point detection on the memory cells in the memory block" is: based on the set first read voltage, the Perform a read operation on the storage unit in the storage block, and determine the storage state of the storage unit according to the read operation; if the storage state of the storage unit is an erased state, then perform the first dead point detection on the storage unit Operation: if the storage state of the storage unit is a programming state, perform a second dead point detection operation on the storage unit.

[0055] Further, in the second embodiment of the present invention, after the formation of the replacement information, an optimization is added: wri...

Embodiment 3

[0088] Figure 4 It is a schematic flowchart of a method for replacing dead cells in a non-volatile memory provided by Embodiment 3 of the present invention. Embodiment 3 of the present invention is optimized on the basis of the above-mentioned embodiments. In this embodiment, if there is a replaceable unit in the non-volatile memory, perform a dead point on the storage unit in the storage block. Before the detection, the optimization also includes: detecting the enabling flag bit of the redundant unit in the free area of ​​the non-volatile memory; determining whether there is a redundant unit whose enabling flag bit is 0, and if there is, determining the There is a replaceable unit in the non-volatile memory; if not, it is determined that there is no replaceable unit in the non-volatile memory.

[0089] On the basis of the above optimization, the replacement of the bad pixel unit with the replaceable unit, and forming replacement information, is specifically optimized as fol...

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Abstract

Embodiments of the invention disclose a method for replacing dead pixel units in a non-volatile memory. The method comprises the following steps of: after the fact that an erasing operation of a to-be-erased block is finished is detected, determining other storage blocks which do not undergo the erasing operation in a non-volatile memory; if a replaceable unit exists in the non-volatile memory, carrying out dead pixel detection on storage units in the storage blocks; and if dead pixel units exist in the storage blocks, replacing the dead pixel units by the replaceable unit, and forming replacement information. By utilizing the method, the users can detect whether dead pixel units exist in the other storage blocks in the non-volatile memory after carrying out the erasing operation on the to-be-erased blocks, and carrying out dead pixel replacement after the dead pixel units are detected, so that the influences, caused by the dead pixel units, on the working performance of the non-volatile memory are avoided, the product performance is improved, and the service life of the non-volatile memory is prolonged.

Description

technical field [0001] The embodiment of the present invention relates to the technical field of storage devices, and in particular to a method for replacing a bad pixel unit in a nonvolatile memory. Background technique [0002] Non-volatile memory (Non-volatile Memory), which uses a nonlinear macro-cell mode inside, has the advantages of large capacity and fast rewriting speed, and is suitable for storing large amounts of data. It is widely used in embedded products, such as digital camera, MP3 player memory card, compact U disk, etc. Generally, a non-volatile memory is composed of several storage blocks (blocks), each block is composed of several storage pages (pages), and each page is composed of multiple storage cells arranged in rows and columns. At the same time, There is also a free area consisting of multiple redundant cells in each page, which is usually used as a detection and error correction mechanism for memory cells, where a memory cell can be regarded as a M...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C29/00G11C29/44
Inventor 刘奎伟薛子恒潘荣华
Owner GIGADEVICE SEMICON (BEIJING) INC
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