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A terminal structure of a power semiconductor device

A technology of power semiconductor and terminal structure, applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of large occupation area and rising device cost, and achieve the effect of alleviating electric field concentration and reducing lateral area

Inactive Publication Date: 2018-11-23
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, in high-voltage devices, the area occupied by the existing extended terminal structure is too large, resulting in an increase in device cost

Method used

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  • A terminal structure of a power semiconductor device
  • A terminal structure of a power semiconductor device
  • A terminal structure of a power semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] Such as figure 1 As shown, the power semiconductor device terminal structure of this example includes a metal drain electrode 1, a first conductivity type semiconductor heavily doped substrate 2, a first conductivity type semiconductor lightly doped drift region 3, and a field The oxide layer 11 is characterized in that the first conductivity type semiconductor lightly doped drift region 3 has a trench region 4, a first conductivity type semiconductor heavily doped region 9, a first implantation region 7, and a second implantation region 6. And the third implantation region 5; the upper surface of the trench region 4 is in contact with the field oxide layer 11; the first conductivity type semiconductor heavily doped region 9 is located on the first conductivity type semiconductor lightly doped drift region 3 and is far away from the device One end of the active region; the side surfaces of the first injection region 7, the second injection region 6 and the third injection...

Embodiment 2

[0035] Such as Picture 9 As shown, the structure of this example is based on Embodiment 1, and a buried layer 14 of a semiconductor of the first conductivity type is formed directly under the trench 4, which can reduce the electric field concentration at the corner of the trench and further improve the withstand voltage.

Embodiment 3

[0037] Such as Picture 10 As shown, the structure of this example is based on the embodiment 1, the trench 4 is dug into the body of the second conductivity type heavily doped region 4, which can eliminate the electric field spike at the corner of the trench 4 in the embodiment 1. Improve withstand voltage.

[0038] Semiconductor materials such as silicon carbide, gallium arsenide, indium phosphide or silicon germanium can also be used to replace bulk silicon when making devices.

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Abstract

The invention belongs to the technical field of semiconductors and relates to a terminal structure of a power semiconductor device. The core idea of ​​the present invention is to fold a planarly extended Junction Termination Extension (JTE) type terminal structure into the body, and make full use of the thickness of the drift region in the body, thereby reducing the lateral area of ​​the terminal. The electric field concentration at the terminal end of the PN junction is alleviated, the position of the breakdown point is transferred from the original terminal end of the PN junction to the body, and the withstand voltage of the terminal can reach the breakdown voltage of the parallel plane junction. This structure can obtain a smaller area than the conventional structure under the condition of the same withstand voltage.

Description

Technical field [0001] The invention belongs to the field of semiconductor technology, and relates to a power semiconductor device terminal structure. Background technique [0002] The ability of power devices to block high voltages mainly depends on the reverse bias breakdown voltage of a specific PN junction in the device structure. In power devices, affected by the bending of the PN junction or the surface non-ideal factors at the termination of the PN junction, the reverse bias PN junction breakdown voltage is limited to occur near the surface or the local area of ​​the junction bend in advance of the parallel plane junction in the body. The breakdown phenomenon. The junction terminal is a special structure specially designed to reduce the local electric field, improve the surface breakdown voltage and reliability, and make the actual breakdown voltage of the device closer to the ideal value of the parallel plane junction. In vertical conductive devices, it is usually distr...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/06
CPCH01L29/0607
Inventor 任敏张玉蒙底聪廖航李沂蒙李泽宏张金平高巍张波
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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