Thin film transistor array substrate and manufacturing method therefor

Abstract

The invention provides a manufacturing method for a thin film transistor. The manufacturing method comprises the steps of forming a first passivation layer, an organic insulating layer and a second passivation layer on a gate electrode insulating layer, an active layer, and a source electrode and a drain electrode of a substrate through deposition in sequence; coating the second passivation layer with a photoresist layer, performing a patterning process on the photoresist layer to define a pixel electrode layer pattern, a common electrode layer pattern and a pattern of a curing layer which is opposite to the active layer; defining the pixel electrode layer pattern, the common electrode layer pattern and the curing layer pattern through an etching process on the second passivation layer, the organic insulating layer, the first passivation layer and a part of the gate electrode insulating layer, and peeling off the photoresist layer; and forming a common electrode layer on the defined insulating layer, and forming the pixel electrode layer on the organic insulating layer where the second passivation layer is exposed.

Description

technical field [0001] The invention relates to the field of manufacturing thin film transistors, in particular to a thin film transistor array substrate and a manufacturing method thereof. Background technique [0002] In the prior art (Fringe Field Switching abbreviated as FFS) mode thin film transistors have a large viewing angle and transmittance and are widely used at present. Usually, 6-8 times of mask (exposure) are usually required in the manufacturing process of thin film transistor array substrates. For the formation of gate lines and gates, active layer, etch stop layer, source and drain, passivation layer, electrodes and vias, etc., the production process is complicated, and the production cost increases accordingly. Contents of the invention [0003] The invention provides a thin film transistor array substrate and a manufacturing method, which can reduce the number of exposures, simplify the manufacturing process, and reduce the cost. [0004] The manufactur...

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Problems solved by technology

[0002] In the prior art (Fringe Field Switching abbreviated as FFS) mode thin film transistors have a large viewing angle and transmittance and are widely used at present. Usually, 6-8 times of mask (exposure) are usually required in the manufacturing process of thin film transistor array substrates. For the formation of gate lines and gates, active layer, etch barrier layer, source and drain, passivation layer, electrodes and vias, etc., the production process is complicated and the production cost increases accordingly

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