Method for starting sleep mode, memory control circuit unit and storage device

A storage device and sleep mode technology, which is applied in the direction of program control device, program loading/starting, etc., can solve the problems of solid state hard drives entering sleep mode and being unable to operate, and achieve the effect of avoiding entering sleep mode by mistake

Active Publication Date: 2016-11-23
PHISON ELECTRONICS
View PDF6 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, since the device sleep signal is transmitted through one of the pins of the power connection interface, in an example where the power supply interface of the host system does not suppor

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for starting sleep mode, memory control circuit unit and storage device
  • Method for starting sleep mode, memory control circuit unit and storage device
  • Method for starting sleep mode, memory control circuit unit and storage device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0078] Generally speaking, a memory storage device (also called a memory storage system) includes a rewritable non-volatile memory module and a controller (also called a control circuit). Typically memory storage devices are used with a host system such that the host system can write data to or read data from the memory storage device.

[0079] figure 1 It is a schematic diagram showing a host system and a memory storage device according to an exemplary embodiment. figure 2 It is a schematic diagram showing a computer, an input / output device and a memory storage device according to an exemplary embodiment of the present invention.

[0080] Please refer to figure 1 , the host system 1000 generally includes a computer 1100 and an input / output (input / output, I / O for short) device 1106 . The computer 1100 includes a microprocessor 1102 , a random access memory (random access memory, RAM for short) 1104 , a system bus 1108 and a data transmission interface 1110 . The input / out...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides a method for starting a sleep mode, a memory control circuit unit and a storage device. The method comprises the steps that when an electric potential signal on a sleep signal pin of the device has a second logic electric potential which is different from an initial first logic electric potential, a sleep pin linkage mark can be set as a first value; a device sleep function mark is set as the first value, so that an instruction for starting a device sleep function received from a host system can be responded; and if the instruction for starting the device sleep function is received and the device sleep function mark has the first value, a device sleep function of the memory storage device can be started. The method for starting the sleep mode, the memory control circuit unit and the storage device provided by the invention can effectively avoid wrong starting of the sleep mode.

Description

technical field [0001] The invention relates to a dormant mode startup method, a memory control circuit unit and a memory device. Background technique [0002] Since rewritable non-volatile memory (rewritable non-volatile memory) has the characteristics of data non-volatility, power saving, small size, no mechanical structure, fast read and write speed, etc., in recent years, rewritable non-volatile memory The memory industry has become a very popular part of the electronics industry. For example, a solid-state drive using flash memory as a storage medium has been widely used as a hard disk of a computer host to improve the access performance of the computer. In addition, due to the rising awareness of environmental protection, green technology has become the goal of electronics manufacturers. In order to prevent the drive from continuing to consume power when the user is not using it, the SSD has been designed to support the Device Sleep Signal protocol. However, since t...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): G06F9/445
Inventor 朱健华
Owner PHISON ELECTRONICS
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap