Semiconductor device and manufacturing method thereof

Abstract

A method of manufacturing a semiconductor device may include: forming an opening in an insulating layer to expose a portion of a major surface of a substrate, the substrate comprising a first semiconductor material; forming a protrusion in the opening using a first epitaxial growth process, the protrusion comprising a first portion disposed in the opening and a second portion extending out of the opening, the protrusion comprising a second semiconductor material different from the first semiconductor material; and forming the second semiconductor material on sidewalls of the second portion of the protrusion using a second epitaxial growth process different from the first epitaxial growth process.

Description

technical field [0001] Embodiments of the present invention relate to integrated circuit devices, and more particularly, to semiconductor devices and methods of manufacturing the same. Background technique [0002] The semiconductor industry has experienced rapid growth due to continued improvements in the integration density of various electronic components (eg, transistors, diodes, resistors, capacitors, etc.). In most cases, this improvement in integration density comes from iterative reductions in minimum feature size, which allow more components to be integrated into a given area. However, smaller component sizes may result in more leakage current. As the demand for smaller electronic devices has recently increased, the demand for reducing leakage current of semiconductor devices has also increased. [0003] Fin Field Effect Transistors (FinFETs) have emerged as an effective alternative to further reduce leakage current in semiconductor devices. In a FinFET, an activ...

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Problems solved by technology

Stacking faults caused by growing layers of high-carrier-mobility materials on silicon substrates also degrade the electrical properties of such transistors

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