Contact Structure and Method of Forming

Abstract

Contact structures and methods of forming contact structures are contemplated by this disclosure. A structure includes a dielectric layer over a substrate, an adhesion layer, a silicide, a barrier layer, and a conductive material. The dielectric layer has an opening to a surface of the substrate. The adhesion layer is along sidewalls of the opening. The silicide is on the surface of the substrate. The barrier layer is on the adhesion layer and the silicide, and the barrier layer directly adjoins the silicide. The conductive material is on the barrier layer in the opening.

Description

[0001] Priority Claims and Cross References [0002] This application claims the benefit of U.S. Provisional Application No. 62 / 034,424, entitled "Method of Ti SalicideFormation with Low Resistance and Resulting Structure," filed August 7, 2014, the entire contents of which are hereby incorporated by reference. technical field [0003] The present invention relates to integrated circuit devices, and more particularly, to contact structures and methods of forming them. Background technique [0004] Semiconductor devices are used in a variety of electronic applications, such as personal computers, cell phones, digital cameras, and other electronic equipment, as examples. Semiconductor devices are typically fabricated by sequentially depositing insulating or dielectric layers, conductive layers, and layers of semiconducting material over a semiconductor substrate and patterning the individual material layers using photolithography to form circuit components and elements thereon...

AI Technical Summary

Problems solved by technology

These two characteristics may sometimes be incompatible

Some components of semiconductor devices can actually result in slower speeds when reduced in size

Images