Quantum dot film, its manufacturing method and display device

A production method and technology of quantum dot film, applied in the optical field, can solve the problems of high cost and complicated pixel isolation structure process, and achieve the effect of reducing production cost and solving color accuracy.

Active Publication Date: 2019-03-12
NANJING TECH CORP LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The main purpose of the present invention is to provide a quantum dot film, its manufacturing method and display device, so as to solve the problem that the pixel isolation structure made by the yellow light process is complicated and expensive in the prior art

Method used

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  • Quantum dot film, its manufacturing method and display device
  • Quantum dot film, its manufacturing method and display device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0045] The steps of the method for fabricating a surface-modified mask provided in this embodiment include:

[0046] Step S01, immersing the mask in a solution with a hydrophobic material, the hydrophobic material being heptadecafluorodecyltrimethoxysilane, so that the hydrophobic material is fixed on the surface of the mask;

[0047] Step S02, separating the mask plate immobilized with the hydrophobic material from the solution, and drying the mask plate;

[0048] Step S03, placing the first mask on the first surface of the mask plate with 96×64 hollowed-out parts, the first mask is composed of 96×64 first shielding parts and first transparent parts connecting each first shielding part. Composition of light parts, the first shielding part corresponds to the hollow part one by one, and the area of ​​each first shielding part in one-to-one correspondence is larger than the area of ​​each hollow part, and the UV lamp is used to emit ultraviolet light with a wavelength of 185nm a...

Embodiment 2

[0050] The manufacturing method of the surface-modified light-transmitting substrate provided in this embodiment is as follows:

[0051] Mix the coupling agent and initiator in a solvent to form a substrate treatment solution, place one side of the transparent substrate in the substrate treatment solution, and bond and fix the coupling agent on the surface of the transparent substrate to form a bond surface, the first reaction raw material is arranged on the bonding surface, the first reaction raw material located in the first area is covered, and the first reaction raw material located in the second area is irradiated with ultraviolet rays, so that the first reaction raw material and the coupling agent The grafting reaction is carried out under ultraviolet irradiation, thereby forming a hydrophobic region, removing the first reaction raw material in the first region, setting the second reaction raw material on the first region and the second covering region, and covering the s...

Embodiment 3

[0054] The manufacturing method of the quantum dot film provided in this embodiment adopts the surface-modified mask plate in Embodiment 1 and the surface-modified light-transmitting substrate in Embodiment 2, and the manufacturing method includes the following steps:

[0055] Step S1, placing a surface-modified mask on the first surface, and the surface-modified 96×64 hollowed-out parts correspond to one group of 96×64 microarray patterns in the hydrophobic region;

[0056] Step S2, using an inkjet printing (model Dimatix Materials Printer DMP-2831) process to make the hydrophobic red quantum dot ink enter the hydrophobic area through the hollow part;

[0057] Step S3, drying the quantum dot ink in the hydrophobic region,

[0058] Step S4, disposing the surface-modified mask on the first surface, and the surface-modified 96×64 hollowed-out parts correspond to another group of 96×64 microarray patterns in the hydrophobic region;

[0059] Step S5, using an inkjet printing (mod...

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Abstract

The invention provides a quantum dot film, its manufacturing method and a display device. The manufacturing method of the quantum dot film includes: step S1, forming a hydrophilic region and a hydrophobic region on the first surface of the light-transmitting substrate; step S2, disposing a surface modification mask with a plurality of hollow parts on the first surface , and the hollow part in the surface modification mask is set corresponding to the hydrophilic region or the hydrophobic region, the surface modification mask has a first modified surface and a second modified surface, and the first modified surface and the second modified surface The surfaces are respectively hydrophilic and hydrophobic; in step S3, the first modified surface is a hydrophobic surface, so that the hydrophobic quantum dot ink enters the hydrophobic region through the hollow part, or the first modified surface is a hydrophilic surface, Make the hydrophilic quantum dot ink enter the hydrophilic area through the hollow part; step S4, dry the quantum dot ink in the hydrophilic area or the hydrophobic area. The above manufacturing method reduces the manufacturing cost of the quantum dot film.

Description

technical field [0001] The invention relates to the field of optical technology, in particular to a quantum dot film, a manufacturing method thereof and a display device. Background technique [0002] With the continuous development of science and technology, people's requirements for display quality continue to increase. Quantum dot light-emitting diode (QLED) display is considered to be the most representative display in the future due to its high color purity, color saturation and wide color gamut. technology. At present, QLED devices are mainly produced by solution process, such as inkjet printing, screen printing, spin coating, slit coating, etc. Since the displayed pixels are very small, the coating of sub-pixels is generally carried out by inkjet printing process. Selective coating, that is, using nozzles to print R, G, and B quantum dot inks sequentially in RGB sub-pixel grooves constructed with pixel isolation structures. Due to the low efficiency of blue QLED dev...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/32H01L51/50H01L51/56
CPCH10K59/35H10K50/115H10K71/00
Inventor 顾辛艳甄常刮
Owner NANJING TECH CORP LTD
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