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A kind of topological insulator thin film with photovoltaic properties and preparation method thereof

A technology of topological insulators and photovoltaic properties, applied in photovoltaic power generation, semiconductor/solid-state device manufacturing, semiconductor devices, etc., to achieve good solar cells and optoelectronic application prospects, low cost, and easy scale production

Active Publication Date: 2019-12-06
INST OF METAL RESEARCH - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] At present, there is no report on the controllable preparation of different conductivity types of topological insulator thin films by chemical vapor deposition and the study of their photoelectric conversion properties.

Method used

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  • A kind of topological insulator thin film with photovoltaic properties and preparation method thereof
  • A kind of topological insulator thin film with photovoltaic properties and preparation method thereof
  • A kind of topological insulator thin film with photovoltaic properties and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0023] The bismuth telluride thin film is prepared by chemical vapor deposition method, the P-type silicon substrate is used as the substrate, and the substrate is treated with ethanol, acetone and dilute hydrofluoric acid successively. The raw material is bismuth telluride powder with a purity of 99.99%, the total gas flow rate is 50 sccm, and the volume ratio of argon to hydrogen is 4:1. The working pressure is 50Pa, the furnace center temperature is 520°C, the distance between the substrate and the furnace center is 14.5 cm, the substrate temperature is about 300°C, and the working time is 5 minutes. Using nanovoltmeter and sunlight to test the electrode potential and current-voltage curve of the thin film material in the light and dark state, all the tests are in the atmospheric state, let the sunlight directly shine on the film through the glass, which is close to the actual application situation, and the measured The open-circuit photovoltage of the thin film is 0.11V, a...

Embodiment 2

[0025] The bismuth selenide thin film is prepared by chemical vapor deposition method, the P-type silicon substrate is used as the substrate, and the substrate is treated with ethanol, acetone and dilute hydrofluoric acid successively. The raw material is bismuth selenide powder with a purity of 99.99%, the total gas flow rate is 50 sccm, and the volume ratio of argon to hydrogen is 4:1. The working pressure is 50Pa, the furnace center temperature is 520°C, the distance between the substrate and the furnace center is 14.5 cm, the substrate temperature is about 300°C, and the working time is 10 minutes. The measured photovoltage of the film is 0.11V, and its voltage changes with sunlight irradiation see image 3 .

Embodiment 3

[0027] The antimony telluride thin film is prepared by chemical vapor deposition method, the P-type silicon substrate is used as the substrate, and the substrate is treated with ethanol, acetone and dilute hydrofluoric acid successively. The raw material is antimony telluride powder with a purity of 99.99%. The distance between the substrate and the center of the furnace is 14.5 cm. The total gas flow rate is 50 sccm, and the volume ratio of argon to hydrogen is 4:1. The working pressure is 50Pa, the furnace center temperature is 520°C, and the working time is 5 minutes. The measured photovoltage of the film is 0.09V, and its voltage changes with sunlight irradiation see Figure 4 .

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Abstract

The invention aims at providing a topological insulator thin film with photovoltaic characteristics and a preparation method thereof. A chemical vapor deposition method is used for preparing the thin film and is characterized by comprising the step in which a topological insulator material is evaporated and deposited on a silicon substrate to obtain the topological insulator thin film. The thin film has a full-daylight band photoelectric response capability. Sunlight is used as a light source. The photoelectric response time of an n-TI / p-Si or p-TI / n-Si two-layer structure thin film is lower than 1 s. The area of a tested sample is 9 to 15 square millimeter, the strongest sunlight intensity is 200 W / m<2>, open circuit photo voltage reaches 0.1 V and short circuit photo current reaches tens of microamperes, which increase along with increasing of the thin film area and the sunlight intensity, and the topological insulator thin film with photovoltaic characteristics and the preparation method thereof are applicable to a solar cell.

Description

technical field [0001] The invention relates to battery materials, photovoltaic materials and electronic materials, and particularly provides a topological insulator thin film with photovoltaic characteristics in the full sunlight band and a preparation method thereof. The thin film has strong photoelectric conversion ability in the full sunlight band and can be used for solar cells. Background technique [0002] Solar cell technology has been developing rapidly recently, experiencing the first generation of silicon-based solar cells, the second generation of thin-film solar cells, the third generation of new concept research and development of solar cells and the fourth generation of composite thin-film material solar cells. Under the current energy shortage situation, the openness of renewable energy and clean energy has been paid more and more attention. Solar cells can convert abundant natural light into electricity and are environmentally friendly. Research on high-eff...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02H01L31/074H01L31/032
CPCY02E10/50
Inventor 王振华张志东赵晓天杨亮耿殿禹高翾
Owner INST OF METAL RESEARCH - CHINESE ACAD OF SCI
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