A kind of topological insulator thin film with photovoltaic properties and preparation method thereof

A technology of topological insulators and photovoltaic properties, applied in photovoltaic power generation, semiconductor/solid-state device manufacturing, semiconductor devices, etc., to achieve good solar cells and optoelectronic application prospects, low cost, and easy scale production
CN106206249BActive Publication Date: 2019-12-06INST OF METAL RESEARCH - CHINESE ACAD OF SCI

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
INST OF METAL RESEARCH - CHINESE ACAD OF SCI
Publication Date
2019-12-06

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

The invention aims at providing a topological insulator thin film with photovoltaic characteristics and a preparation method thereof. A chemical vapor deposition method is used for preparing the thin film and is characterized by comprising the step in which a topological insulator material is evaporated and deposited on a silicon substrate to obtain the topological insulator thin film. The thin film has a full-daylight band photoelectric response capability. Sunlight is used as a light source. The photoelectric response time of an n-TI / p-Si or p-TI / n-Si two-layer structure thin film is lower than 1 s. The area of a tested sample is 9 to 15 square millimeter, the strongest sunlight intensity is 200 W / m<2>, open circuit photo voltage reaches 0.1 V and short circuit photo current reaches tens of microamperes, which increase along with increasing of the thin film area and the sunlight intensity, and the topological insulator thin film with photovoltaic characteristics and the preparation method thereof are applicable to a solar cell.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The invention relates to battery materials, photovoltaic materials and electronic materials, and particularly provides a topological insulator thin film with photovoltaic characteristics in the full sunlight band and a preparation method thereof. The thin film has strong photoelectric conversion ability in the full sunlight band and can be used for solar cells. Background technique

[0002] Solar cell technology has been developing rapidly recently, experiencing the first generation of silicon-based solar cells, the second generation of thin-film solar cells, the third generation of new concept research and development of solar cells and the fourth generation of composite thin-film material solar cells. Under the current energy shortage situation, the openness of renewable energy and clean energy has been paid more and more attention. Solar cells can convert abundant natural light into electricity and are environmentally friendly. Research on high-eff...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More