A trap-pushing process
A technology in the process and heating stage, which is applied in the field of diode optimization, can solve the problem that the injection concentration and energy are difficult to be changed, and achieve the effect of improving product performance.
Active Publication Date: 2020-02-04
上海芯导电子科技股份有限公司
View PDF8 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0004] Usually TVS diodes are composed of BN (N-type buried layer) and P-type substrate, and the formation of PN junction can be simply divided into two parts: ion implantation and push well; it is difficult to determine the implantation concentration and energy in the ion implantation stage. Make changes, but there is still room for optimization after injection
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0029] In the following description, numerous specific details are given in order to provide a more thorough understanding of the present invention. Of course, the present invention can also have other embodiments besides these detailed descriptions.
[0030] The well pushing process of the present invention will be described in detail below in conjunction with specific embodiments and accompanying drawings.
[0031] In the traditional push-well process of TVS diodes, nitrogen gas is mainly passed through, and a small amount of oxygen is passed through when the temperature is raised from 1000°C to 1150°C. On this basis, the present invention improves the leakage of TVS diodes by rationally selecting the model of the push-well furnace tube equipment, introducing and correctly proportioning DCE (dichloroethylene) atmosphere, and optimizing the heating and cooling time to improve product performance.
[0032] The well-pushing process of the present invention is carried out in a ...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The invention relates to the field of optimization of diodes, in particular to a diffusion technology applied to a TVS diode. The diffusion technology is carried out in a reaction furnace tube and comprises a first temperature rise stage, introducing an inert gas into the reaction furnace tube to surround a semiconductor device in the reaction furnace tube through the inert gas; a second temperature rise stage, introducing oxygen into the reaction furnace tube to generate a thin oxide layer on the surface of the semiconductor device; and a constant-temperature stage and a cooling stage, further introducing the inert gas into the reaction tube to further carry out the diffusion technology by the semiconductor device in an atmosphere of the inert gas, wherein a dichloroethylene gas is also introduced into the reaction furnace tube at the second temperature rise stage to adsorb sodium ions impurities in the reaction furnace tube and on the surface of the semiconductor device.
Description
technical field [0001] The invention relates to the field of diode optimization, in particular to a well pushing process applied to TVS diodes. Background technique [0002] TVS tube (Transient Voltage Suppressor, transient voltage suppressor diode), as a diode-shaped protection device, is widely used in various I / O (input / output) interfaces, mobile phones, PCs, and tablets. With the development of semiconductor technology, the requirements of products for TVS diodes are becoming more and more stringent. The leakage current of TVS diodes must be reduced again and again in order to meet the needs of product optimization. [0003] However, there are many possibilities for TVS diode leakage. Product design, process flow, and production line contamination will all cause leakage current. Experimental tests show that the leakage distribution in the initial measurement is randomly distributed. Because the chemicals and equipment used in the process are all factory-certified benchm...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/223H01L29/82
CPCH01L21/223H01L29/82
Inventor 陈敏徐远欧新华袁琼符志岗刘宗金
Owner 上海芯导电子科技股份有限公司