A transistor and method for constructing its model
A technology of transistors and models, applied in semiconductor devices, semiconductor/solid-state device manufacturing, instruments, etc., can solve problems such as high contact resistance, low electron mobility, and poor heat dissipation
Active Publication Date: 2019-02-05
ZHEJIANG UNIV
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Problems solved by technology
[0007] Aiming at the problems of low electron mobility and poor heat dissipation caused by high contact resistance encountered in the process of transistor miniaturization in the prior art, the present invention aims to design a transistor that can achieve high electron density while being miniaturized. Mobility, good heat dissipation
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Embodiment 1
[0027] 1) Select the Si cell, where its lattice constant a=b=c. Select three sets of lattice constants, after relaxation, calculate the energy corresponding to each set of lattice constants, and perform function fitting between the obtained energy and the corresponding lattice constants to obtain the optimal lattice constant, a=b=c=2.715 A.
[0028] 2) In step 1) after optimization, the SnO single atomic layer is constructed on the (111) surface of the Si substrate, and the lattice constant a=b (the z direction is the vacuum layer, c=65.167Å) is relaxed, and then the phase Corresponding energy, get the optimal lattice constant a=b=3.840 Å, c=65.167 Å; then calculate its electrical properties.
[0029] 3) In step 1) after optimizing the SnO diatomic layer on the (111) surface of the Si substrate, take the lattice constant a=b (the z direction is the vacuum layer, c=65.167Å) to relax, and then calculate the phase Corresponding energy, get the optimal lattice constant a=b=3.840...
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The invention provides a transistor. The transistor comprises an Si substrate, a channel layer, a source electrode and a drain electrode, an insulating layer with which the channel layer is covered, and a grid electrode positioned on the insulating layer, wherein the channel layer is single-atom layer SnO with a semiconductor conduction characteristic; and the source electrode and the drain electrode are double-atom layer SnO with a metal conduction characteristic. The invention also provides a method for constructing a model of the transistor through calculation and simulation. According to the transistor provided by the invention, due to the fact that the channel layer, the source electrode and the drain electrode adopt a single two-dimensional material SnO, so that the ohmic contact of the channel layer and the side walls of the source electrode and the drain electrode is improved, the contact resistance of the channel layer and the side walls of the source electrode and the drain electrode is greatly reduced, and the heat dissipation characteristic of the transistor is improved; and a simulation test proves that the transistor has high electronic mobility.
Description
technical field [0001] The invention relates to a transistor composed of a single material of tin oxide, which belongs to the technical field of transistors. Background technique [0002] Since the 1970s, driven by Moore's law, transistors have been continuously miniaturized and have entered the nanoscale era. Traditional silicon-based transistors can even reach 3nm, and it is more likely that several atoms to single atom transistors will appear. However, due to the impact of contact resistance and leakage current, the heat dissipation problem caused by the high integration of equipment is becoming more and more serious. Also, for a transistor of a few atoms, its electron mobility is not as high as that of silicon or alternative semiconductors. [0003] Therefore, it has been suggested that a possible method is to use two-dimensional crystal materials as matrix materials. We know that the dimensions of materials are closely related to the relevant properties of materials....
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IPC IPC(8): H01L29/78H01L29/10H01L29/08H01L21/336G06F17/50
CPCG06F30/00H01L29/0847H01L29/1033H01L29/66477H01L29/78
Inventor 陆赟豪吴琛兰珍云肖承诚徐晓颖
Owner ZHEJIANG UNIV