Method for achieving QLED white light with high color rendering and adjustable color temperature based on InP-ZnS quantum dots

A QY-LED and quantum dot technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of poor color rendering of white light, and achieve high color rendering, convenient control, and narrow half-wave width Effect

Inactive Publication Date: 2016-12-07
FUDAN UNIV
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Problems solved by technology

[0004] 1. Use three-color or four-color LEDs to combine independent circuits, and adjust the driving current of each circuit chip to achieve white light with adjustable color temperature, but the color rendering of white light is poor

Method used

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  • Method for achieving QLED white light with high color rendering and adjustable color temperature based on InP-ZnS quantum dots
  • Method for achieving QLED white light with high color rendering and adjustable color temperature based on InP-ZnS quantum dots
  • Method for achieving QLED white light with high color rendering and adjustable color temperature based on InP-ZnS quantum dots

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Embodiment Construction

[0025] Below in conjunction with specific embodiment, further illustrate the present invention. These examples are only for illustrating the present invention and are not intended to limit the scope of the present invention. In addition, it should be understood that after reading the teachings of the present invention, those skilled in the art can make various changes or modifications to the present invention, and these equivalent forms also fall within the scope defined by the appended claims of the present application.

[0026] The embodiment of the present invention relates to a method for QLED white light with high color rendering and adjustable color temperature based on InP / ZnS quantum dots, using computer simulation to simulate the spectral power distribution of QY-LED, red LED and green LED based on a theoretical model, and The relationship between luminous flux and power and the change of driving current. Using the principle of color light mixing and addition and the...

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Abstract

The invention belongs to the technical field of a quantum dot white light (QLED), and particularly provides a method for achieving QLED white light with high color rendering and adjustable color temperature based on InP-ZnS quantum dots. The method comprises the steps that the InP-ZnS yellow quantum dots with the high quantum yield and the small half-wave width are firstly prepared; a blue light chip-excited InP-ZnS yellow quantum (QY-LED), a red-light LED, a green-light LED and a control circuit are included; by regulating the control circuit, different driving currents are supplied to the QY-LED, the red-light LED and the green-light LED to generate a QY-LED, a red-light LED and a green-light LED with different light intensities, then QLED white lights with different color temperatures are generated, and the QLED white light of which a color rendering index Ra and a special color rendering index R9 are both larger than 95 in the color temperature range of 2,700 k-6,500 k and the color temperature is adjustable is obtained.

Description

technical field [0001] The invention belongs to the technical field of quantum dot white light (QLED), and in particular relates to a method for realizing QLED white light with high color rendering and adjustable color temperature based on InP / ZnS quantum dots. Background technique [0002] Quantum dots are quasi-zero-dimensional nano-semiconductor materials, which are composed of a small number of atoms or atomic groups, and usually have a three-dimensional scale of 1 to 10 nm. Due to the influence of quantum size effect and dielectric confinement effect, it shows many unique optical and electrical properties, such as tunable spectrum, narrow half-wave width and high quantum yield, which makes quantum dots in the field of optoelectronic display and Biomedical field has broad application prospects. Quantum dot electroluminescent devices have the advantages of low power consumption, high efficiency, fast response and high sensitivity, and have shown great academic value and ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L51/56
CPCH10K50/115H10K71/00
Inventor 杨武梅时良朱嘉弢张万路陈秋行贺良杰郭睿倩
Owner FUDAN UNIV
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