Provided is a high-integration
semiconductor device resulting from the following steps: a first step of forming a sacrificial layer on an epitaxial substrate and forming an electronic device layer on the sacrificial layer; a second step of
etching the electronic device layer and the sacrificial layer corresponding to an active device region, so as to form an epitaxial template in which an epitaxial pattern is implemented; a third step of forming, on the epitaxial template, a first
insulation layer that encompasses the epitaxial pattern; a fourth step of
etching a part of the first
insulation layer that encompasses a target epitaxial pattern to be transferred, so as to
expose the sacrificial layer, and forming a first bonding layer on the electronic device layer; a fifth step of forming a second
insulation layer on a target substrate, and
etching a part of the second insulation layer corresponding to the first bonding layer, so as to form a stepped second bonding layer; a sixth step of mounting the epitaxial template on the target substrate so that the first bonding layer and the second bonding layer are bonded to each other; and a seventh step of removing the sacrificial layer exposed by means of the selective etching process, so as to selectively transfer the electronic device layer onto the active device region on the target substrate, wherein the fourth to seventh steps are repeatedly performed by etching a part of the first insulation layer that encompasses another target epitaxial pattern to be transferred, and thus the electronic device layer is selectively transferred onto each active device region on the target substrate.