Device and method for improving pulling speed of czochralski monocrystalline silicon

A technology of Czochralski single crystal and silicon pulling speed, applied in the direction of self-melt pulling method, single crystal growth, single crystal growth, etc., can solve the problem of unusable thermal field components, reduce production costs and improve safety. , the effect of increasing the axial temperature gradient

Inactive Publication Date: 2016-12-14
INNER MONGOLIA ZHONGHUAN SOLAR MATERIAL
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although this method can effectively increase the casting speed; however, due to the high temperature in the furnace, once water leakage occurs, it will immediately vaporize and react with the thermal field components in the furnace, making the thermal field components unusable

Method used

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  • Device and method for improving pulling speed of czochralski monocrystalline silicon
  • Device and method for improving pulling speed of czochralski monocrystalline silicon
  • Device and method for improving pulling speed of czochralski monocrystalline silicon

Examples

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Effect test

Embodiment 1

[0032] like Figure 1-2As shown, the device for improving the pulling speed of Czochralski monocrystalline silicon includes a cooling mechanism 1, a cooling medium inlet pipe 2, and a cooling medium outlet pipe 3. The cooling mechanism 1 includes a hollow cylindrical cooling body 4 and six Ten fins 5, the ratio of the height H of the cooling body 4 to the diameter D is 1:2, the cooling body 4 includes thirty sections of vertical tubes 6 and thirty sections of U-shaped tubes 7, two adjacent sections of vertical tubes 6 A section of U-shaped tube 7 is arranged between the nozzles of the tubes, and the adjacent vertical tubes 6 and U-shaped tubes 7 are connected from end to end to form a serpentine coil, and a pair of fins are symmetrically arranged on the inner and outer walls of each vertical tube 6 5. The fins 5 are high-temperature-resistant fins, and the fins 5 can increase the heat dissipation area of ​​the cooling body 4; the angle α between the adjacent two fins 5 on each...

Embodiment 2

[0034] like Figure 3-4 As shown, the device for improving the pulling speed of Czochralski monocrystalline silicon includes a cooling mechanism 1, a cooling medium inlet pipe 2, and a cooling medium outlet pipe 3. The cooling mechanism 1 includes a hollow cylindrical cooling body 4 and six Ten fins 5, the ratio of the height H of the cooling body 4 to the diameter D is 1:3, the cooling body 4 includes thirty sections of vertical tubes 6 and thirty sections of U-shaped tubes 7, two adjacent sections of vertical tubes 6 A section of U-shaped tube 7 is arranged between the nozzles of the tubes, and the adjacent vertical tubes 6 and U-shaped tubes 7 are connected from end to end to form a serpentine coil, and a pair of fins are symmetrically arranged on the inner and outer walls of each vertical tube 6 5. The fins 5 are high-temperature-resistant fins 5, and the fins 5 can increase the heat dissipation area of ​​the cooling body 4; the angle α between the adjacent two fins 5 on e...

Embodiment 3

[0036] The method for improving the pulling speed of Czochralski monocrystalline silicon carried out by using Example 1 includes the following steps: (1) preparation, (2) heating chemical material, (3) intermediate treatment, (4) equal diameter, (5) finishing and post-processing; among them,

[0037] (1) Preparation: install the cooling mechanism 1 at a place 500 mm above the monocrystalline silicon growth interface;

[0038] (2) Heating chemical material: After the preparation is completed, place the polysilicon raw material in the quartz crucible and vacuumize it, then feed argon gas into the quartz crucible so that the furnace pressure in the quartz crucible is 10torr, and wait until the furnace pressure in the quartz crucible After stabilization, start to heat the chemical material. The heating power is 70kw. While heating the material, the inert element cooling medium is delivered to the cooling mechanism 1 through the cooling medium inlet pipe 2. The delivery flow rate o...

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Abstract

The invention discloses a device for improving the pulling speed of czochralski monocrystalline silicon. The device comprises a cylinderical cooling mechanism, a cooling medium inlet pipe and a cooling medium outlet pipe. A method for improving the pulling speed of the czochralski monocrystalline silicon comprises the following steps: firstly, preparing; secondly, heating to melt materials; thirdly, performing intermediate treatment; fourthly, performing equal diameter treatment; fifthly, ending and performing post treatment. The device and the method disclosed by the invention have the advantages that an axial temperature gradient of monocrystalline silicon rods is increased by using the principle that an inert element cooling medium gasifies to absorb heat, and the pulling speed of monocrystalline silicon is improved by 20 percent or above; an upper heat insulating mechanism and the like of a thermal field system are not changed, so that no extra energy consumption is added; the inert element cooling medium is recycled, so that the production cost of the monocrystalline silicon is reduced; the used inert element cooling medium is liquid helium or liquid argon, does not react with a silicon melt and does not affect thermal field components, so the method disclosed by the invention is safer than a conventional method, and the safety of production of the monocrystalline silicon is improved.

Description

Technical field: [0001] The invention relates to the field of monocrystalline silicon production, in particular to a device and method for increasing the pulling speed of Czochralski monocrystalline silicon. Background technique: [0002] Monocrystalline silicon is an important part of crystalline materials, and it is mainly used as semiconductor materials and solar photovoltaic power generation, heating components, etc. In the past 30 years, with the rapid development of new energy technologies, especially the rapid development of solar energy industry in research and development, commercial production, and market development, the market demand for monocrystalline silicon has been increasing year by year. Due to the low production level and low level of production technology of traditional monocrystalline silicon production and processing enterprises, the final result is low production efficiency and high cost of monocrystalline silicon, which is extremely unfavorable for t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B15/00C30B29/06
CPCC30B15/00C30B29/06
Inventor 王军磊尚伟泽刘伟武志军刘学夏梓铭
Owner INNER MONGOLIA ZHONGHUAN SOLAR MATERIAL
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