120results about How to "Increase pulling speed" patented technology

A soil opener has a frog mount adapted to be coupled to a shank or other mounting member of a farm implement. A spreader is removably coupled to the frog mount and includes forward and rearward product delivery channels that are intended to be flow-coupled to product delivery tubes or hoses of the farm implement. A tip is removably coupled to the spreader. The leading edges of the frog mount, the spreader, and the tip, as well as the geometry between these components are such that draft is minimized even when the soil opener is pulled through the soil at higher speeds, e.g., excess of 5 mph. The soil opener may be equipped with an optional soil gathering module.

A method for manufacturing a silicon single crystal wafer for IGBT, including introducing a hydrogen atom-containing substance into an atmospheric gas at a hydrogen gas equivalent partial pressure of 40 to 400 Pa, and growing a single crystal having an interstitial oxygen concentration of 8.5×1017 atoms / cm3 or less at a silicon single crystal pulling speed enabling pulling of a silicon single crystal free of grown-in defects. The silicon single crystal is irradiated with neutrons so as to dope with phosphorous; an n-type dopant is added to the silicon melt; or phosphorous is added to the silicon melt so the phosphorous concentration in the silicon single crystal is 2.9×1013 to 2.9×1015 atoms / cm3; a p-type dopant having a segregation coefficient smaller than that of the phosphorous is added to the silicon melt so the concentration in the single crystal is 1×1013 to 1×1015 atoms / cm3 corresponding to the segregation coefficient thereof.

The invention provides an apparatus for producing a single crystal, and a method for producing a silicon single crystal using the same. An apparatus for producing a single crystal includes a heating device which heats polycrystalline silicon raw material held in a crucible to form silicon melt, and a pulling up device which grows a silicon single crystal while pulling it up from the silicon melt accompanied with rotation. By providing the apparatus with a magnetic field generation unit which applies to the silicon melt a cusp magnetic field a shape of neutral plane of which is symmetric around the rotation axis of the silicon single crystal and is curved in the upward direction, various conditions for producing a silicon single crystal having a defect free region is relaxed, and a silicon single crystal having a defect free region is produced at high efficiency.

The invention discloses a method for producing a 65Mn hot rolled steel plate, which comprises the steps of smelting, refining, thin slab casting, soaking, high pressure water descaling, hot continuous rolling, cooling and reeling based on the process of thin slab casting and rolling. The molten steel superheat temperature is T superheat (30 DEG C <T superheat < / = 45 DEG C), the charging temperature of casting blanks is T charging (900 DEG C < / = T charging < / = 1050 DEG C), the final rolling temperature is T final (850 DEG C < / = T final < / = 950 DEG C), the reeling temperature is T reeling ( 550DEG C < / = T reeling < / = 650 DEG C), the liquid core pressure of casting blanks is L pressure (2 < / = L pressure < / = 20mm), and the depth of a single-surface decarburized layer is 0.3 to 0.9 percent ofthe depth of the steel plate. The chemical constitutes of molten steel after being alloyed in a refining process comprise 0.62-0.70 wt.% of C, 0.17-0.37 wt.% of Si, 0.90-1.20 wt.% of Mn, less than orequal to 0.035 wt.% of P, less than or equal to 0.035 wt.% of S, less than or equal to 0.25 wt.% of Cr, less than or equal to 0.25 wt.% of Ni and the balance of Fe and inevitable impurities. The 65Mnhot rolled steel plate produced in the method has the characteristics of uniform structure property, high thermal stability and high strength, and the quality of the 65Mn hot-rolled steel plate is obviously improved.