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CZ Czochralski method mono-crystal furnace graphite thermal field structure

A technology of single crystal furnace and Czochralski method, which is applied in the directions of single crystal growth, self-melting liquid pulling method, crystal growth, etc. It can solve the problems such as unsatisfactory effect of heat shield device, increase heat insulation effect, and improve equipment production capacity , the effect of reducing production costs

Inactive Publication Date: 2009-10-21
芜湖升阳光电科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, the effect of the heat shield device according to the above two structures is not satisfactory, and there is still a need for improvement to further increase the utilization rate of energy

Method used

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Embodiment 1

[0026] In the gap between the heat shield outer layer 3 and the heat shield inner layer 1 according to the present invention, a filled carbon felt 2 is provided.

[0027] To block heat conduction, the main influencing factors are the thermal conductivity coefficient of the thermal insulation material and the thickness of the thermal insulation layer.

[0028] The heat shield of the present invention increases the gap between the inner and outer layers of the heat shield, and can be filled with 2 to 3 layers of graphite carbon felt to increase the heat insulation performance. As we all know, because the density of carbon felt is lower than that of graphite, its thermal conductivity is greatly reduced, and it is widely used. One of the thermal insulation materials, this method improves the thermal insulation performance by 10% compared with the traditional one;

[0029] In addition, due to the increase of the gap between the inner and outer heat shields, the thermal insulation p...

Embodiment 2

[0031] The heat shield outer layer 3 of the present invention adopts the structure of slope reflection.

[0032] The outer layer 3 of the heat shield of the present invention adopts slope reflection, and the outer layer is made of high-density graphite material, which increases the emissivity of heat radiation.

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Abstract

The invention discloses a CZ Czochralski method mono-crystal furnace graphite thermal field structure, which comprises a thermal shielding and a gas stream guidance device. Athermal shielding outer layer (3) and a thermal shielding inner layer (1) are arranged on the thermal shielding and the gas stream guidance device. A gap is arranged between the thermal shielding outer layer (3) and the thermal shielding inner layer (1). Due to the adoption of the technical proposal as well as the adoption of the reflection angle of an inclined plane, the reflectivity of thermal radiation is increased; and the gaps between the thermal shielding outer layer and the thermal shielding inner layer at the middle and lower part of the thermal shielding are added, therefore, graphitic carbon felt is filled, and the heat insulation effect of the thermal shielding is increased. The structure leads the traditional 20-inch thermal sealed field to maintain the drawing condition under 1420 DEG C needing to consume 70-75kw / h heat to reduce to 60-65kw / h heat, thus saving more than 10% energy. The structure fills 2-3 layers of graphitic carbon felt to increase the thermal insulation and change the longitudinal temperature gradient of crystals during the growth of mono-crystals. Besides, the drawing speed is increased by 0.05mm / min, the production capacity of equipment is improved and the production cost is reduced.

Description

technical field [0001] The invention belongs to the technical field of photoelectric conversion material manufacturing, and relates to its production process equipment. More specifically, the invention relates to a graphite thermal field structure of a CZ Czochralski single crystal furnace. Background technique [0002] The Czochralski method is the CZ single crystal method. The polysilicon in the quartz crucible is melted by resistance heating and kept at a temperature slightly higher than the melting point of silicon. Shoulder, shoulder turning, equal diameter, finishing, crystal removal and other steps to complete crystal growth. As we all know, the melting point of silicon is 1420°. If it is a 20-inch open thermal field device with a feeding capacity of 75kg, it will consume about 120kw·h of electric energy per hour to maintain this temperature. At present, the world is short of energy, and the proportion of energy cost is increasing day by day. How to reduce productio...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B15/16
Inventor 马四海张笑天
Owner 芜湖升阳光电科技有限公司
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