Straight-pull eight-inch silicon single crystal thermal field and production method of eight-inch silicon single crystal

Abstract

The invention discloses a straight-pull eight-inch silicon single crystal thermal field and a production method of an eight-inch silicon single crystal. The straight-pull eight-inch silicon single crystal thermal field is characterized in that a protective tray compressed sheet is arranged on a lower protective tray compressed sheet; a graphite felt is filled between the lower protective tray compressed sheet and the protective tray compressed sheet; the bottom of a main thermal insulation cylinder is clamped with a lower thermal insulation cylinder; the bottom of the lower thermal insulation cylinder is clamped with the lower protective tray compressed sheet; the bottom of the lower protective tray compressed sheet is clamped with a furnace bottom support ring; an outer guide cylinder is arranged on a guide cylinder support ring; and an inner guide cylinder is clamped on the outer guide cylinder, and a graphite felt is filled between the inner guide cylinder and the outer guide cylinder. The thermal field has compact structure and better thermal insulation property; and in the thermal field, the equal-diameter average pulling speed is improved, equal-diameter power consumption is reduced, production cost is reduced, and production efficiency is improved. The production method of the eight-inch silicon single crystal comprises: clearing and charging a single-crystal furnace, vacuumizing, smelting a material, thermally sealing, automatically seeding, shouldering, carrying out equal-diameter growing and ending. By utilizing the method, the production efficiency and yield of a product are improved.

Description

technical field [0001] The invention relates to a Czochralski eight-inch silicon single crystal thermal field and a production process method for an eight-inch silicon single crystal, belonging to the technical field of a silicon single crystal thermal field and a silicon single crystal production process method. Background technique [0002] Solar energy is the cleanest, safest and most reliable energy source in the future, and silicon monocrystalline solar cells are one of the most important green energy sources for human beings in the future. Under the existing technology and conditions and in terms of battery performance, silicon single crystal is an ideal material for manufacturing solar cells, and silicon single crystal with high-quality parameters is the basic condition for the production of high-efficiency solar cells. [0003] The mainstream product of Czochralski silicon single crystal in the world is Φ200mm, gradually transitioning to Φ300mm, and the research and ...

AI Technical Summary

Problems solved by technology

[0005] 1. The overall thermal field is not compact enough, the insulation effect is poor, and the energy consumption is high;

[0006] 2. The unreasonable structure design of the thermal field guide tube leads to poor flow of argon gas, poor heat insulation effect, a large amount of silicon oxide volatiles are easily attached to the outside of the outer guide tube, and the crystal formation is unstable;

[0008] 4. The structure of the graphite crucible is unreasonable and the service life is low

[0010] Using the above production process to produce silicon single crystal uses the original thermal field, so the silicon single crystal produced has higher energy consumption, shorter service life of the system, and shorter service life of the crucible holder, resulting in higher production costs , the yield rate and crystal pulling speed are not high, and the general yield rate is less than 54.18%.

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