A kind of preparation method and growth device of n-type silicon carbide crystal

Abstract

The invention provides a preparation method and a growth device of an N-type silicon carbide crystal, the method comprising: (1) placing a raw material in a high temperature zone of a crucible, placing a seed crystal in a low temperature zone of the crucible, and the top outer wall of the crucible facing inward An annular gas groove is formed by the depression; the assembled crucible is placed in the furnace body of the crystal growth furnace, so that the annular air groove is close to the ventilation hole of the furnace body; (2) in the crystal growth stage, the air is passed into the furnace body through the ventilation hole Nitrogen source gas, controlling the growth temperature and pressure, and growing N-type silicon carbide crystals on the seed crystals. Through the annular air groove close to the vent hole of the furnace body, the incoming gas can flow along the annular air groove, the air flow rate is fast, and the gas diffuses into the crucible, so that the heat transfer in the crucible away from the central axis is accelerated, reducing the number of crucibles. The radial temperature gradient improves the quality of crystal growth.

Description

technical field [0001] The invention relates to a preparation method and a growth device of an N-type silicon carbide crystal, belonging to the technical field of semiconductor material preparation. Background technique [0002] Silicon carbide has attracted widespread attention due to its excellent semi-insulating properties, especially for high-power semiconductor devices with special needs. Silicon carbide has become a potential material for these devices due to its high temperature, high frequency, and high power characteristics. . [0003] At present, the industrial production of silicon carbide crystals is mostly produced by the PVT method, but due to its high requirements for growth conditions, the defects introduced during the growth process limit its performance improvement and further application and development. Therefore, the improvement of defects has become the primary prerequisite for improving the quality of silicon carbide substrates. [0004] Dislocations...

AI Technical Summary

Problems solved by technology

For TSD and BPD, dislocation slip can occur, and when it hits a TED wall or other defects, the slip will stagnate, and dislocation accumulation will occur near the TED wall or defect, resulting in excessive local dislocation density of the SiC substrate , which seriously affects the performance and further application and development of silicon carbide crystals

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