A Czochralski method single crystal silicon growth furnace
A single crystal silicon, Czochralski technology, applied in the direction of single crystal growth, crystal growth, self-melt pulling method, etc., can solve the problem of low control difficulty, achieve increased growth rate, increase axial temperature gradient, reduce The effect of temperature control difficulty
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[0021] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.
[0022] see Figure 1-3 , a Czochralski method monocrystalline silicon growth furnace, comprising a fixed box 1 and a pyrometer 9, the left part of the inner cavity of the fixed box 1 is fixedly installed with a thermal insulation cylinder-2, and the inner wall of the thermal insulation cylinder-2 is fixedly equipped with a heating element 3, fixed The top right side of the box 1 is fixedly equipped with a seed crystal 8, and the top right side of the fixed box...
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