A Czochralski method single crystal silicon growth furnace

A single crystal silicon, Czochralski technology, applied in the direction of single crystal growth, crystal growth, self-melt pulling method, etc., can solve the problem of low control difficulty, achieve increased growth rate, increase axial temperature gradient, reduce The effect of temperature control difficulty

Active Publication Date: 2021-05-11
杭州飞宇磁电器材有限公司
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Problems solved by technology

[0004] The invention provides a Czochralski method monocrystalline silicon growth furnace, which has the advantages of large production capacity, good quality and low control difficulty, and solves the above-mentioned background technical problems

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  • A Czochralski method single crystal silicon growth furnace
  • A Czochralski method single crystal silicon growth furnace
  • A Czochralski method single crystal silicon growth furnace

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Embodiment Construction

[0021] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0022] see Figure 1-3 , a Czochralski method monocrystalline silicon growth furnace, comprising a fixed box 1 and a pyrometer 9, the left part of the inner cavity of the fixed box 1 is fixedly installed with a thermal insulation cylinder-2, and the inner wall of the thermal insulation cylinder-2 is fixedly equipped with a heating element 3, fixed The top right side of the box 1 is fixedly equipped with a seed crystal 8, and the top right side of the fixed box...

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Abstract

The invention relates to the technical field of Czochralski monocrystalline silicon, and discloses a Czochralski monocrystalline silicon growth furnace, which includes a fixed box and a pyrometer. A heating element is fixedly installed on the inner wall of cylinder one, and a seed crystal is fixedly installed on the top right side of the fixed box. Through the setting of the growth chamber, the melting of polysilicon is separated from the place where the single crystal silicon body is pulled, and the melting of polysilicon through the quartz crucible to form a melt provides raw materials for pulling the single crystal silicon body inside the growth chamber, avoiding The uneven thermal field in the quartz crucible reduces the quality of the single crystal silicon body, ensures that the temperature of the growth interface in the growth chamber can be kept within a certain range, and reduces the difficulty of temperature control. At the same time, the setting of the quartz crucible and the growth chamber ensures sufficient raw materials , and through the setting of the rotating device, the number of monocrystalline silicon bodies pulled at one time is increased, and the production efficiency is increased.

Description

technical field [0001] The invention relates to the technical field of Czochralski single crystal silicon, in particular to a Czochralski method single crystal silicon growth furnace. Background technique [0002] Monocrystalline silicon is a kind of semiconductor material, which is generally used in the manufacture of integrated circuits and other electronic components. There are two types of monocrystalline silicon growth techniques: one is the zone melting method, and the other is the Czochralski method. The commonly used method, the Czochralski method for growing single crystal silicon is shown in the attached Figure 4 Shown: Put the high-purity polysilicon raw material into the quartz crucible 5, then pass argon gas through the argon gas input port 10 and use a vacuum pump to form a low pressure, under this condition, the polysilicon is heated and melted, and at the same time, the sling 7 will be used. The seed crystal 8 with a specific growth direction is in contact w...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B15/10C30B15/24
CPCC30B15/10C30B15/24
Inventor 不公告发明人
Owner 杭州飞宇磁电器材有限公司
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