A kind of high-quality silicon carbide crystal and its growth method and device

Abstract

The present application discloses a high-quality silicon carbide crystal and a growth method and device thereof, which include the following steps: 1) assembling: after installing a seed crystal unit in a crucible filled with raw materials, move it into a closed accommodating cavity; 2) long Crystal stage: control the crystal growth conditions in the accommodating cavity, adjust the temperature of the first cooling water to 8-16 ℃, and the flow rate to 18-54 mL / s, that is, to obtain the crystal; wherein, the accommodating cavity is composed of An assembly of cooling jackets is formed, the cooling jackets include a first cooling pipe and a second cooling pipe, the first cooling pipe being sleeved inside the second cooling pipe and cooperating to form a connection for passage into the second cooling pipe. A first interlayer of cooling water, the thickness of the first interlayer linearly increases along the direction from the bottom of the crucible to the opening. The crystal growth method can realize the controllable axial temperature gradient inside the crucible, thereby controlling the growth quality and growth rate of the crystal; at the same time, the axial temperature gradient formed in the crucible is more stable, which can further ensure the crystal growth quality.

Description

technical field [0001] The application relates to a high-quality silicon carbide crystal and a growth method and device thereof, belonging to the technical field of semiconductor growth. Background technique [0002] Silicon carbide single crystal is one of the most important third-generation semiconductor materials. It is widely used in power electronics, power electronics, and power electronics due to its large band gap, high saturation electron mobility, strong breakdown field, and high thermal conductivity. RF devices, optoelectronic devices and other fields. [0003] At present, the main preparation method of silicon carbide single crystal is the physical vapor transport (PVT) method. In the process of preparing crystals by PVT method, there are radial temperature gradients and axial temperature gradients in the growth chamber of the growing crystals. The seed crystal is crystallized into a single crystal of silicon carbide. [0004] In the process of crystal growth,...

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Problems solved by technology

[0005] However, the current control of the temperature gradient is mainly done through the design of the internal insulation structure or the flow of air, but the above methods have too many uncontrollable factors

The processing of the heat preservation structure, the change of air flow caused by vibration or other external factors will cause the temperature field in the crucible to be unstable, resulting in an uncontrollable temperature gradient in the crucible

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