Crystal growth apparatus and crystal growth method

A technology of a growth device and a growth method, which is applied in the field of semiconductor crystal growth equipment, and can solve problems such as narrow perfect crystal region.

Pending Publication Date: 2020-07-07
中环领先(徐州)半导体材料有限公司 +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] In the prior art, during the crystal pulling process, the heat in the crystal is always dissipated through its surface, which will cause the axial center temperature gradient Gc to be smaller than the edge temperature gradient Ge. According to the V/G theo

Method used

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  • Crystal growth apparatus and crystal growth method
  • Crystal growth apparatus and crystal growth method
  • Crystal growth apparatus and crystal growth method

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Embodiment Construction

[0044] The following describes the embodiments of the present invention in detail, and those skilled in the art will understand that the following embodiments are intended to explain the present invention, and should not be regarded as limiting the present invention. Unless otherwise specified, in the following examples that do not explicitly describe specific techniques or conditions, those skilled in the art can carry out according to commonly used techniques or conditions in this field or according to product instructions.

[0045] The term "perfect crystal" or "defect-free crystal" herein does not mean an absolutely perfect crystal or a crystal without any defects, but allows the existence of a very small amount of one or more crystal defects, which is not enough to make the crystal or its The result is a large change in certain electrical or mechanical properties of the wafer that degrades the performance of electronic devices made from it.

[0046] The "perfect crystal w...

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Abstract

The invention provides a crystal growth device and a crystal growth method. The growth device comprises a shell which defines a cavity and is provided with a first opening and a second opening which are oppositely arranged; a heat preservation layer is arranged on the inner wall of the shell; a crucible is surrounded by the heat preservation layer and is used for containing molten soup; a heater is arranged between the crucible and the heat preservation layer; a cooling sleeve is arranged below the first opening; a heat shield is arranged below the cooling sleeve and consists of a plurality ofmolybdenum sheets which are arranged in parallel; and a first micro heater is arranged below the heat shield and extends in the horizontal direction. According to the invention, heat energy loss on the crystal surface can be effectively prevented; compared with the prior art, the method has the advantages that the axial temperature gradient of the crystal is increased, the radial temperature gradient of the crystal can be reduced, the crystallization rate of the large-size crystal with the size of 12 inches or above is increased, the good time is maintained within the range of 1300-1400 DEG C, defects are fully discharged out of the crystal, and then the approximately perfect crystal is grown.

Description

technical field [0001] The invention relates to the technical field of semiconductor crystal growth equipment, in particular to a crystal growth device and a growth method. Background technique [0002] In order to meet the requirement of gradually reducing the line width of existing semiconductor devices, it is best to grow defect-free crystals. In order to produce defect-free crystals with high yield, it is necessary to control the axial temperature gradient G and the radial temperature gradient G(r) at the solid-liquid interface. Because the thermal field distribution in the crystal growth equipment directly affects G and G(r) at the solid-liquid interface, but as the crystal diameter increases, it becomes very difficult to control G(r), especially for large crystals of 12 inches and above. In addition, during the crystal pulling process of large-sized crystals, it is necessary to increase the axial temperature gradient at the solid-liquid interface to ensure smooth pull...

Claims

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Application Information

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IPC IPC(8): C30B15/14
CPCC30B15/14
Inventor 卢哲玮黄末
Owner 中环领先(徐州)半导体材料有限公司
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