Heterojunction spin filtering and negative differential resistance effects-based preparation technology

A technology of negative differential resistance and preparation technology, which is applied in the manufacture of circuits, electrical components, semiconductors/solid-state devices, etc., and can solve problems such as backward methods

Inactive Publication Date: 2016-12-14
XUCHANG UNIV
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Problems solved by technology

[0005] Therefore, the existing process me

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  • Heterojunction spin filtering and negative differential resistance effects-based preparation technology
  • Heterojunction spin filtering and negative differential resistance effects-based preparation technology
  • Heterojunction spin filtering and negative differential resistance effects-based preparation technology

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Embodiment Construction

[0019] In order to facilitate the understanding of the present invention, the present invention will be described in more detail below in conjunction with the accompanying drawings and specific embodiments. Preferred embodiments of the present invention are given in the description and drawings, but the present invention can be implemented in many different forms and is not limited to the embodiments described in the description. On the contrary, these embodiments are provided to make the understanding of the disclosure of the present invention more thorough and comprehensive.

[0020] It should be noted that when a certain element is fixed to another element, it includes directly fixing the element to the other element, or fixing the element to the other element through at least one other element in the middle. When an element is connected to another element, it includes directly connecting the element to the other element, or connecting the element to the other element throu...

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Abstract

The invention provides a Co2MnGe/GaAs heterojunction spin filtering and negative differential resistance effects-based preparation technology. The technology comprises the steps of (1) building a crystal structure of full Heusler L21 type Co2MnGe and optimizing a lattice structure thereof; (2) calculating and analyzing the state density of the Co2MnGe under an equilibrium lattice constant aeq; (3) building a heterojunction in a Co2MnGe/GaAs<111> direction and optimizing the heterojunction; (4) repeating materials at the left end and the right end of the optimized heterojunction for a cycle respectively as a left electrode and a right electrode of the heterojunction; (5) applying bias to the left electrode and the right electrode of the heterojunction and calculating the quantum spin transport properties of the Co2MnGe/GaAs heterojunction; and (6) obtaining spin filtering and negative differential resistance effects in the transport process through analysis of the transport properties of the Co2MnGe/GaAs heterojunction.

Description

technical field [0001] The invention relates to a Co-based 2 Preparation process of MnGe / GaAs heterojunction spin filter and negative differential resistance effect. Background technique [0002] Injecting efficient spin-polarized current into semiconductors is a key problem to be solved in spintronics. The mechanism of this spin-polarized injection is still not fully understood. One main reason lies in the large impedance mismatch between the spin injection source and the semiconductor substrate during the lengthy quantum transport process. Half-metallic (HM: Half-metallic) magnets, due to exhibiting metallicity in one spin direction and semiconducting or insulating in the other direction, resulting in 100% spin polarization near the Fermi surface, are regarded as It is an ideal spin injection source. Nowadays, people have found that many materials have the above-mentioned semi-metallic properties, such as: rutile CrO 2 , transition metal phosphorus or chalcogenides wi...

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Application Information

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IPC IPC(8): H01L21/336
CPCH01L29/66007H01L29/66984
Inventor 韩红培
Owner XUCHANG UNIV
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