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A kind of growth device and growth method of III-V group semiconductor crystal

A technology of III-V and growth device, which is applied in the field of growth devices of III-V semiconductor crystals, can solve problems such as the influence of crystal growth control stability, complex furnace structure, etc., so as to achieve good control of crystal growth and simplify furnace structure. , space saving effect

Active Publication Date: 2019-07-02
安徽昱升光电科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This structural design not only complicates the structure of the furnace body, but also affects the stability of crystal growth control.

Method used

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  • A kind of growth device and growth method of III-V group semiconductor crystal
  • A kind of growth device and growth method of III-V group semiconductor crystal
  • A kind of growth device and growth method of III-V group semiconductor crystal

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0074] The crystal growth device includes a quartz tube, a crucible, a U-shaped quartz tank, and a quartz support ring. Among them, the 4N quartz tube has a wall thickness of 2mm and is divided into three parts: the upper part is a cylindrical equal-diameter area with an inner diameter of 105mm and a height of 300mm; the middle part is an inverted cone-shaped shoulder area, which forms an angle of 45° with the vertical direction and a height of 46mm; It is a cylindrical seed crystal area with an inner diameter of 10mm and a height of 50mm; the pBN crucible, with a wall thickness of 1mm, is divided into three parts. The upper part is a cylindrical equal diameter area with an inner diameter of 101mm and a height of 100mm; The vertical direction is at an angle of 45°, and the height is 45mm; the bottom is a conical seed crystal area, the top inner diameter is 3mm, the bottom inner diameter is 6mm, and the height is 40mm.

[0075] Put the conical seed crystal with a length of 30mm...

Embodiment 2

[0082]The crystal growth device includes a quartz tube, a crucible, a U-shaped quartz tank, and a quartz support ring. Among them, the 4N quartz tube has a wall thickness of 2mm and is divided into three parts: the upper part is a cylindrical equal-diameter area with an inner diameter of 105mm and a height of 300mm; the middle part is an inverted cone-shaped shoulder area, which forms an angle of 60° with the vertical direction and has a height of 27mm; It is a cylindrical seed crystal area with an inner diameter of 12mm and a height of 50mm; the pBN crucible, with a wall thickness of 1mm, is divided into three parts. The upper part is a cylindrical equal diameter area with an inner diameter of 101mm and a length of 100mm; The vertical direction is at an angle of 60°, the height is 27mm; the bottom is a conical seed crystal area, the top inner diameter is 5mm, the bottom inner diameter is 8mm, and the length is 40mm.

[0083] Put the conical seed crystal with a length of 30mm ...

Embodiment 3

[0090] The crystal growth device includes a quartz tube, a crucible, a U-shaped quartz tank, and a quartz support ring. Among them, the 4N quartz tube has a wall thickness of 2mm and is divided into three parts: the upper part is a cylindrical equal-diameter area with an inner diameter of 155mm and a height of 300mm; the middle part is an inverted conical shoulder area, which forms an angle of 30° with the vertical direction and has a height of 125mm; It is a cylindrical seed crystal area with an inner diameter of 12mm and a length of 50mm; the pBN crucible, with a wall thickness of 1mm, is divided into three parts. The upper part is a cylindrical equal diameter area with an inner diameter of 151mm and a length of 100mm; The vertical direction is at an angle of 30°, and the height is 123mm; the bottom is a conical seed crystal area, the top inner diameter is 5mm, the bottom inner diameter is 6mm, and the height is 40mm.

[0091] Put the conical seed crystal with a length of 30...

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Abstract

The invention provides a growing device for III-V group semiconductor crystals. The growing device comprises a quartz tube (1), a crucible (2) arranged in the quartz tube, a quartz supporting ring (4) arranged on the inner side wall of the upper portion of a cylindrical equal-diameter area of the quartz tube and a quartz groove (3) formed in the quartz supporting ring, wherein the quartz tube comprises the cylindrical equal-diameter area (1-1) on the upper portion, an inverted-cone-shaped shoulder expansion area (1-2) in the middle and a cylindrical seed crystal area (1-3) at the bottom; the crucible comprises a cylindrical equal-diameter area (2-1) on the upper portion, an inverted-cone-shaped shoulder expansion area (2-2) in the middle and a conical seed crystal area (2-3) at the bottom; an opening is formed in the center of the quartz groove (3).

Description

[0001] This application claims the priority of the Chinese patent application filed on June 3, 2016 with the application number of 201610311568.4 and the invention titled "A device and method for growing III-V semiconductor crystals", the entire contents of which are Incorporated herein by reference. technical field [0002] The invention belongs to the technical field of semiconductor materials, and in particular relates to a growth device and a growth method for III-V semiconductor crystals. Background technique [0003] With the rapid development of optical fiber communication, high-speed electronic devices, high-efficiency solar cells and laser diodes, the application of III-V semiconductor crystals, such as GaAs, GaP, InAs, InP and their solid solution single crystals More and more widely, which greatly promotes the development of III-V semiconductor crystal growth technology. At present, the growth methods of III-V semiconductor crystals mainly include liquid sealing ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B11/00C30B29/40
CPCC30B11/00C30B11/002C30B29/40
Inventor 狄聚青朱刘
Owner 安徽昱升光电科技有限公司