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Power semiconductor module and thermal fatigue life determination method for the same

A power semiconductor and thermal fatigue technology, which is applied in the direction of semiconductor working life test, single semiconductor device test, etc., can solve the problems of power conversion device abnormal stop, production line stop, large economic loss, etc., to reduce costs, simplify the judgment process, reduce The effect of small volume

Pending Publication Date: 2017-01-04
FUJI ELECTRIC CHINA
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  • Summary
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AI Technical Summary

Problems solved by technology

During the operation of the power conversion device, when the power semiconductor module reaches its thermal fatigue life, it will cause the power conversion device to stop abnormally, and may cause the production line to stop
However, it takes a long time to find out the cause of the stop and repair it, so it may cause a large economic loss

Method used

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  • Power semiconductor module and thermal fatigue life determination method for the same
  • Power semiconductor module and thermal fatigue life determination method for the same
  • Power semiconductor module and thermal fatigue life determination method for the same

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Embodiment approach 1

[0044] Next, use Figure 1 to Figure 8 Embodiment 1 of the present invention will be described.

[0045] (Power semiconductor module 1)

[0046] The power semiconductor module of the present invention is not limited to the internal circuit configuration. In the first embodiment, the power semiconductor module 1 has power semiconductor elements 41 to 46 composed of IGBTs 41 a to 46 a and freewheeling diodes 41 b to 46 b, respectively. A three-phase bridge inverter circuit (6in1IGBT module) is used as an example to illustrate.

[0047] Figure 1a It is a plan view schematically showing the power semiconductor module 1 according to the first embodiment, Figure 1b It is a side view schematically showing the power semiconductor module 1 according to the first embodiment. figure 2 It is an equivalent circuit diagram schematically showing the power semiconductor module 1 according to the first embodiment.

[0048] like Figure 1a As shown, on the left side of the power semicond...

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Abstract

The invention discloses a power semiconductor module and a thermal fatigue life determination method for the same. The power semiconductor is arranged inside the housing; a plurality of power semiconductor members are bonded with an insulation substrate through welding; and the insulation substrate is bonded with a base through welding. The power semiconductor module comprises a thermal fatigue life determination member; the thermal fatigue life determination member is formed on a surface side of the housing and has following color aging characteristics: the color of the thermal fatigue life determination member which is presented under prescribed temperature is changed along the increase of temperature circulation times that the power semiconductor module experiences and is finally aged to a prescribed fully aging color. The thermal fatigue life determination member determines the thermal fatigue life of the power semiconductor module according to the color of the thermal fatigue life determination member which is presented in the prescribed temperature.

Description

technical field [0001] The present invention relates to a power semiconductor module, in particular to a power semiconductor module including power semiconductor elements such as IGBT (Insulated Gate Bipolar Transistor) for high power conversion, and a thermal fatigue life determination method of the power semiconductor module. Background technique [0002] In recent years, power semiconductor modules have been used not only in high-power fields represented by power generation and power supply, but also in wider fields such as household appliances, railways, electric vehicles, and fuel cell power generation systems. Under the above circumstances, the power semiconductor module will have a great impact on the quality and reliability of each application, so the power semiconductor module is required to have high reliability. [0003] The temperature of the power semiconductor module rises and falls according to the temperature change in the operating environment. The internal...

Claims

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Application Information

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IPC IPC(8): G01R31/26
CPCG01R31/2642
Inventor 项澹颐
Owner FUJI ELECTRIC CHINA
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