A quantum dot single photon source and its preparation method
A single photon source and quantum dot technology, applied to electrical components, electrical solid devices, circuits, etc., can solve the problems of limited application, time-consuming, and difficulty in finding positioning points, so as to facilitate mass production and improve efficiency , The effect of facilitating mass production
Active Publication Date: 2018-04-13
武汉光谷量子技术有限公司
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Problems solved by technology
[0007] Since it is difficult to find the positioning point on the surface of centimeter-scale epitaxial structure for micron-scale light spots, it takes a lot of time, which limits the application of this technology in industrial production.
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[0031] The present invention will be described in further detail below in conjunction with the accompanying drawings and embodiments.
[0032] see figure 1 As shown, the embodiment of the present invention provides a quantum dot single photon source, including a substrate 1, a buffer layer 2, a DBR mirror layer 3, a back gate 4, an active layer 5, and a front gate 6 from bottom to top. And the second DBR structure layer 7, there is a single quantum dot in the active layer 5, and the single photon source body 9 is provided with two electrodes 8, one electrode 8 is connected with the back grid 4, and the other electrode 8 is connected with the front grid 6 Connect, as the positive and negative poles, use other parts of the single photon source body 9 as conductors to form a complete circuit, and a microcavity structure 10 is opened on the single photon source body 9 corresponding to the quantum dots.
[0033] The present invention also provides a preparation method of a quantum...
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The invention discloses a quantum dot single photon source and its preparation method, relating to the field of single photon sources. The method includes growing a buffer layer on a substrate, alternately growing at least 4 pairs of GaAs and Al0.95Ga0.05As on the buffer layer to obtain a DBR mirror layer, growing n-doped GaAs on the DBR mirror layer as a back gate; prefabricating an imprint template which is provided with a plurality of convex structures matched with single quantum dots, imprinting a nano-imprint template structure on the back gate, and etching the quantum dot growth stress concentration region corresponding to the convex structures; and growing the quantum dots in the region to obtain an active layer, growing a front gate on the active layer, alternately growing at least 4 pairs of GaAs and Al0.95Ga0.05As on the front gate to obtain an upper surface DBR layer, and marking and etching the light source sample to obtain a quantum dot single photon source. The quantum dot single photon source and its preparation method can quickly and accurately locate the positions of the quantum dots, and is convenient for industrial production.
Description
technical field [0001] The invention relates to the field of single photon sources, in particular to a quantum dot single photon source and a preparation method thereof. Background technique [0002] With the progress and development of society, the parallel processing ability of computers is getting stronger and stronger, especially the rapid progress of supercomputing, which poses a major threat to human information security. At the same time, the society's demand for communication confidentiality is also increasing. The degree of confidentiality is mainly based on increasing the complexity of the algorithm, but the confidential information formed by this technology can be cracked. [0003] Quantum communication is a research field resulting from the combination of quantum theory and information theory. It is a new type of communication method that uses quantum entanglement effect to transmit information. It is a means of communication based on the single quantum state of ...
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IPC IPC(8): H01L33/30H01L33/10H01L33/06H01L33/00H01L23/544
Inventor 王亮王肇中秦金李永平
Owner 武汉光谷量子技术有限公司