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Sigesn material and its preparation method

A substrate and ion technology, applied in the field of preparation of SiGeSn materials, can solve the problems of poor thermal stability, easy segregation of Sn, high cost, etc., and achieve the effects of large-scale production, simple process and low cost

Active Publication Date: 2019-02-01
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Aiming at the above-mentioned deficiencies in the prior art, the present invention proposes a SiGeSn material and a preparation method thereof, which are used to solve the time-consuming long process in the prior art due to the use of molecular beam epitaxy or chemical vapor deposition to grow SiGeSn materials , high cost, poor quality, poor thermal stability, easy segregation of Sn, etc.

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  • Sigesn material and its preparation method

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Embodiment Construction

[0021] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.

[0022] see figure 1 . It should be noted that the diagrams provided in this embodiment are only schematically illustrating the basic concept of the present invention, although only the components related to the present invention are shown in the diagrams rather than the number, shape and Dimensional drawing, the type, quantity and proportion of each component can be changed arbitrarily during actual implementation, and the component ...

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Abstract

The invention provides a SiGeSn material and a preparation method therefor. The preparation method comprises the following steps of providing a substrate, wherein the substrate comprises a SiGe layer; injecting atoms, molecules, ions or plasmas containing a Sn element into the SiGe layer; and performing annealing treatment on the substrate after performing injection. Compared with the prior art, the SiGeSn material and the preparation method therefor have the advantages of low cost, simple process, higher quality, and capability of promoting large-scale production.

Description

technical field [0001] The invention belongs to the field of semiconductor material preparation, in particular to a preparation method of SiGeSn material. Background technique [0002] At present, SiGeSn materials are widely used in the field of semiconductors. When growing SiGeSn materials, the method usually used is molecular beam epitaxy (MBE). The process of growing SiGeSn materials in the existing MBE process is: first epitaxially grow a layer of SiGe buffer layer on the substrate, and then epitaxially grow SiGeSn thin film material layer. This method can obtain a SiGeSn thin film material layer with better crystal quality, but the equipment is expensive, the growth process is time-consuming, and the cost is high, which will be limited in large-scale production. [0003] Some people use the chemical vapor deposition (CVD) process to grow SiGeSn thin film materials, but the process is unstable, and the worthy SiGeSn thin film materials are of poor quality, poor thermal ...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/265H01L21/324C30B29/10
CPCH01L21/26513H01L21/3245
Inventor 张波孟骁然俞文杰狄增峰张苗
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI