Semiconductor structure forming method

A technology of semiconductor and gate structure, which is applied in the field of formation of semiconductor structures, and can solve the problems of increased difficulty in the process of fin field effect transistors and unstable performance of fin field effect transistors.

Active Publication Date: 2017-01-11
SEMICON MFG INT (SHANGHAI) CORP +1
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Problems solved by technology

[0004] However, with the reduction in size of semiconductor devices and the increase in device density, the process of forming fin f

Method used

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  • Semiconductor structure forming method
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  • Semiconductor structure forming method

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Embodiment Construction

[0032] As mentioned in the background, with the reduction of the size of semiconductor devices and the increase of device density, the difficulty of forming the fin field effect transistor increases, and the performance of the formed fin field effect transistor is also unstable.

[0033] After research, it is found that for fin field effect transistors, the fins are used as active regions, and after the gate structure is formed on the surface of the fins, it is necessary to form an ion implantation process in the fins on both sides of the gate structure. lightly doped region. Since the part of the sidewall and top of the fin covered by the gate structure is used to form a channel region, the formed lightly doped region also needs to cover the sidewall and top of the fin, thus it is necessary to use Ion implantation processes with different angles perform light dopant implantation on the sidewalls and tops of several fins respectively. However, due to the different angles of t...

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Abstract

The invention discloses a semiconductor structure forming method. The method comprises steps: a substrate with a first area and an adjacent second area is provided, wherein the surface of the substrate in the first area is provided with a first fin part and an adjacent second fin part, the surface of the substrate is provided with an isolation layer, and the minimal distance between the side wall of the first fin part and the side wall of the second fin part is a first distance; a mask layer is formed on the surface of the isolation layer, wherein an opening for enabling the first area to be exposed is arranged in the mask layer, the opening is provided with a first side wall and an opposite second side wall, the minimal distance between the side wall of the first fin part and the first side wall is larger than the minimal distance between the side wall of the second fin part and the first side wall, and the value obtained by dividing the thickness of the mask layer by the minimal distance between the side wall of the first fin part and the first side wall is larger than that obtained by dividing the distance between the top of the second fin part and the surface of the isolation layer by the first distance; and first lightly-doped injection with a first injection angle is carried out on the first fin part from one side of the first side wall, wherein the tangent value of the first injection angle is smaller than or equal to the value obtained of dividing the thickness of the mask layer by the second distance. The formed semiconductor structure is stable in performance.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for forming a semiconductor structure. Background technique [0002] With the rapid development of semiconductor manufacturing technology, semiconductor devices are developing towards higher element density and higher integration. As the most basic semiconductor device, transistors are currently being widely used. Therefore, with the increase of component density and integration of semiconductor devices, the gate size of planar transistors is getting shorter and shorter. The ability of traditional planar transistors to control channel current Weakened, resulting in short channel effect, resulting in leakage current, and ultimately affecting the electrical performance of semiconductor devices. [0003] In order to overcome the short-channel effect of the transistor and suppress the leakage current, a Fin Field Effect Transistor (Fin FET) is proposed i...

Claims

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Application Information

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IPC IPC(8): H01L21/336
CPCH01L29/66795
Inventor 周飞
Owner SEMICON MFG INT (SHANGHAI) CORP
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