Method for forming fin field effect transistor

Abstract

The invention provides a forming method of a fin field effect transistor. The method comprises the steps as follows: a semiconductor substrate with a P-type region and an N-type region is provided; the surface of the semiconductor substrate in the P-type region is provided with a first fin and a first gate structure stretching across the first fin; the surface of the semiconductor substrate in the N-type region is provided with a second fin and a second gate structure stretching across the second fin; first lightly doped injection is carried out on the first fin to form a first lightly doped region; second lightly doped injection is carried out on the second fin to form a second lightly doped region; first side walls are formed on two side surfaces of the first gate structure; first source and drain regions adjacent to the lateral walls of the first side walls are formed on the surface of the first fin; after the first source and drain regions are formed, second side walls are formed on two side surfaces of the second gate structure and the second side walls are thinner than the first side walls; second source and drain regions adjacent to the lateral walls of the second side walls are formed on the surface of the second fin; and repairing treatment is carried out on the second lightly doped region. According to the forming method of the fin field effect transistor, the performance of the fin-type field effect transistor is improved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for forming a fin field effect transistor. Background technique [0002] MOS transistors are one of the most important components in modern integrated circuits. The basic structure of a MOS transistor includes: a semiconductor substrate; a gate structure located on the surface of the substrate, and source and drain regions located in the semiconductor substrate on both sides of the gate structure. MOS transistors generate switching signals by applying a voltage to the gate and regulating the current through the channel at the bottom of the gate structure. [0003] With the development of semiconductor technology, the ability of the traditional planar MOS transistor to control the channel current becomes weaker, resulting in serious leakage current. Fin Field Effect Transistor (Fin FET) is an emerging multi-gate device, which generally includes a fin protrudin...

AI Technical Summary

Problems solved by technology

[0005] FinFETs formed with prior art techniques suffer from poorer performance and reliability as feature sizes shrink further

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