A kind of low-light amorphous silicon thin-film solar cell and its manufacturing process

Abstract

The invention relates to a weak light type amorphous silicon thin film solar cell and a manufacturing process thereof, belonging to the technical field of solar cells. The weak light type amorphous silicon thin film solar cell is characterized in that the back electrode layer of the thin film solar cell is made into two composite conductive slurry film layers, a first conductive slurry layer is a conductive carbon paste layer, a second conductive slurry layer is a metal conductive slurry layer, the first conductive slurry film layer is between a photoelectric conversion layer and the second conductive slurry layer, the second conductive slurry layer is in an ohmic connection with a front electrode layer through the isolation trench of the photoelectric conversion layer, the series resistance in the cell is reduced, the internal consumption of the cell is reduced, the outward output performance of the cell is improved, and especially the outward output performance under strong light is improved.

Description

technical field [0001] The invention relates to a thin-film solar cell, in particular to a low-light amorphous silicon thin-film solar cell and a manufacturing process thereof, belonging to the technical field of solar cells. Background technique [0002] Compared with crystalline silicon solar cells, amorphous silicon thin film solar cells have the characteristics of longer light absorption band range, so they have greater power generation under the same power. At present, amorphous silicon thin film solar cells are mainly divided into strong light type and weak light type. Light-type, low-light amorphous silicon thin-film batteries are mainly used in indoor weak light or medium-strong light conditions. Generally, the battery size is relatively small and the output power is small, such as solar cells used in electronic products such as calculators and sunflowers. , the low-light amorphous silicon thin-film battery in the known technology is mainly divided into multiple unit...

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Problems solved by technology

The pattern of the back electrode layer is mainly formed by laser scribing or mask silk printing. Mask silk printing directly forms a unit pattern. Laser scribing is to coat the film first and then carve grooves to form a unit pattern. Laser scribing grooves may cause battery front electrode The short circuit or micro-short circuit with the back electrode forms the internal leakage of the battery, which affects the external output performance of the battery. The method of forming the back electrode, but compared with the conductive metal paste, the non-metallic conductive carbon paste also has its inherent disadvantages, namely: 1. Large volume resistance (the volume resistance of the non-metallic conductive carbon paste after silk screen curing is 20~ 50 ohms, while the volume resistance of conductive metal paste with the same thickness is 0.5~5 ohms); 2. The problem of large contact resistance with the front electrode of the battery (non-ohmic contact between non-metallic materials and metal films, contact resistance Relatively large), these shortcomings of non-metallic conductive carbon paste have caused the internal resistance of weak-light amorphous silicon thin-film solar cells to increase, which limits the further improvement of the external output power of the battery, especially under medium-strong light conditions, This effect is more pronounced

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