Closeness detection method

Abstract

A method for detecting the degree of adhesion is provided to detect the degree of adhesion of a protective tape adhered to the front surface of a wafer such as a semiconductor wafer. The adhesion degree detection method detects the adhesion degree between the wafer and the protective tape, and has the following steps: the protective tape bonding process, making the adhesive layer opposite to the front of the wafer and bonding the protective tape to the front of the wafer; the protective tape is peeled off. The process is to peel off the protective tape bonded on the front side of the wafer; the first level difference detection process is to photograph any specific area on the front side of the wafer, and detect the first level difference of the unevenness of the front side; the second level difference A difference detection step of photographing a corresponding region of the adhesive layer corresponding to a specific region in the protective tape peeled off from the front surface of the wafer, and detecting a second level difference of unevenness transferred to the adhesive layer; and a determination step , comparing the first elevation difference with the second elevation difference to determine whether the second elevation difference is within an allowable range relative to the first elevation difference.

Description

technical field [0001] The invention relates to a method for detecting the degree of closeness, which detects the degree of closeness of a protective tape adhered to the front surface of a wafer such as a semiconductor wafer. Background technique [0002] In the manufacturing process of semiconductor devices, a plurality of regions are divided by dividing lines formed in a grid pattern on the front surface of a substantially disk-shaped semiconductor wafer, and devices such as ICs and LSIs are formed in the divided regions. After the semiconductor wafer formed in this way is ground to a predetermined thickness on the backside, the wafer is cut along planned dividing lines, whereby the regions where the devices are formed are divided to manufacture individual device chips. [0003] With regard to the back grinding process of grinding the back of the above-mentioned semiconductor wafer to form a predetermined thickness, in order to protect the front of the semiconductor wafer,...

AI Technical Summary

Problems solved by technology

[0006] However, the front surface of wafers such as semiconductor wafers has fine unevenness, and sometimes the protective tape is not closely adhered to the front surface of the wafer.

When the protective tape is not closely adhered to the front surface of the wafer, there is a problem that the wafer breaks when the back surface of the wafer is ground or the device chips obtained by division come into contact with each other to damage the device chips

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