Unlock instant, AI-driven research and patent intelligence for your innovation.

Novel mask plasma etching method

A plasma and mask technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as inaccurate graphics and inability to remove chromium metal film 2, and achieve the effect of avoiding mask defects

Inactive Publication Date: 2017-02-22
WUXI ZHONGWEI MASK ELECTRONICS
View PDF3 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As a result, in the wet etching process of step 3, the chromium metal film 2 in the exposed area cannot be completely removed, and defects are formed, and the defects are chromium residues 5
If the chromium residue 5 on the chromium metal film 2 cannot be completely removed, it will lead to inaccurate patterns obtained when the mask is subsequently used to expose the crystal garden substrate, and further defects will be formed.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Novel mask plasma etching method
  • Novel mask plasma etching method
  • Novel mask plasma etching method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] In order to effectively avoid the mask defects caused by the drop of residual material particles during the dry etching process during the manufacture of the binary mask, the present invention provides a novel mask plasma etching method, which comprises the following steps:

[0041] S1, utilize a photoresist mask to pattern the photoresist layer coated on the substrate plated with the chromium metal film to obtain a photoresist mask pattern on the photoresist layer; as Figure 5 As shown, the substrate 1 can be made of quartz glass;

[0042] like Image 6 As shown, patterning the photoresist layer 3 refers to transferring the pattern on the photoresist mask plate to the photoresist layer 3 by exposing and developing the photoresist layer 3 . In the specific implementation, after the photoresist layer mask pattern is obtained on the photoresist layer 3, there will be organic residues in the pattern area. The organic residues generally refer to the photoresist residues, ...

Embodiment 2

[0049] In order to effectively avoid the mask defects caused by the drop of residual material particles during the dry etching process during the manufacture of the binary mask, the present invention provides a novel mask plasma etching method, which comprises the following steps:

[0050] S1, utilize a photoresist mask to pattern the photoresist layer coated on the substrate plated with the chromium metal film to obtain a photoresist mask pattern on the photoresist layer; as Figure 5 As shown, the substrate 1 can be made of quartz glass;

[0051] like Image 6As shown, patterning the photoresist layer 3 refers to transferring the pattern on the photoresist mask plate to the photoresist layer 3 by exposing and developing the photoresist layer 3 . In the specific implementation, after the photoresist layer mask pattern is obtained on the photoresist layer 3, there will be organic residues in the pattern area. The organic residues generally refer to the photoresist residues, t...

Embodiment 3

[0058] In order to effectively avoid the mask defects caused by the drop of residual material particles during the dry etching process during the manufacture of the binary mask, the present invention provides a novel mask plasma etching method, which comprises the following steps:

[0059] S1, utilize a photoresist mask to pattern the photoresist layer coated on the substrate plated with the chromium metal film to obtain a photoresist mask pattern on the photoresist layer; as Figure 5 As shown, the substrate 1 can be made of quartz glass;

[0060] like Image 6 As shown, patterning the photoresist layer 3 refers to transferring the pattern on the photoresist mask plate to the photoresist layer 3 by exposing and developing the photoresist layer 3 . In the specific implementation, after the photoresist layer mask pattern is obtained on the photoresist layer 3, there will be organic residues in the pattern area. The organic residues generally refer to the photoresist residues, ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a novel mask plasma etching method. The method includes the following steps of S1 using a photoresist mask plate to perform patterning on a photoresist layer coating a substrate plated with a chromium metallic film so as to obtain a photoresist mask graph on the photoresist layer; S2 taking the photoresist layer patterned in S1 as a protective layer, performing the first dry etching to remove the metallic chromium film; S3 cleaning with deionized water and removing the possible residual particles on the surface of a mask; S4 performing the mask cleaning with an SC-1 cleaning solution to guarantee the residual particles to be thoroughly removed; and S5 taking the patterned photoresist layer as the protective layer to perform the second dry etching. The novel mask plasma etching method effectively prevents the mask defects caused by the falling of the residual particles in the process of dry etching during the binary mask manufacturing process.

Description

technical field [0001] The invention relates to a novel mask plasma etching method, which belongs to the technical field of semiconductor mask manufacturing. Background technique [0002] Due to Moore's Law, the strip width of integrated circuits is getting smaller and smaller, and the size of the patterns formed on the wafer is also decreasing. In order to form fine patterns, a photolithography process using a mask is widely used. In the photolithography process, photoresist is coated on the material layer, light is irradiated on a part of the photoresist through a mask with a predetermined, light shielding pattern, and then the photoresist layer is removed by a developing process using a developing solution. portion is irradiated to form a photoresist layer pattern. Thereafter, a portion of the material layer is exposed through the photoresist layer pattern, and the exposed portion of the material layer is removed by an etching process using the photoresist layer pattern...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02H01L21/027H01L21/3065
CPCH01L21/3065H01L21/02H01L21/0279
Inventor 尤春周家万张鹏王兴平刘维维沙云峰王凤鸣
Owner WUXI ZHONGWEI MASK ELECTRONICS