Formation method for semiconductor structure

Abstract

Disclosed is a formation method for a semiconductor structure. The formation method comprises the steps of providing a substrate, wherein fin parts and an isolation layer are arranged on the surface of the substrate, and a part of side wall surfaces of the fin parts are covered with the isolation layer; forming a gate electrode structure which transversely stretches over the fin parts, wherein the gate electrode structure is positioned on the partial side walls and the top surfaces of the fin parts; forming a first groove in the fin part on at least one side of the gate electrode structure; forming lightly-dope epitaxial layers in the first groove and the side wall surface of the fin part on at least one side of the gate electrode structure, wherein doped ions are arranged in the lightly-dope epitaxial layers; and forming a source region and a drain region in the lightly-dope epitaxial layers on the two sides of the gate electrode structure and in the corresponding fin parts. The performance of the formed semiconductor structure is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for forming a semiconductor structure. Background technique [0002] With the rapid development of semiconductor manufacturing technology, semiconductor devices are developing towards higher element density and higher integration. As the most basic semiconductor device, transistors are currently being widely used. Therefore, with the increase of component density and integration of semiconductor devices, the gate size of planar transistors is getting shorter and shorter. The ability of traditional planar transistors to control channel current Weakened, resulting in short channel effect, resulting in leakage current, and ultimately affecting the electrical performance of semiconductor devices. [0003] In order to overcome the short-channel effect of the transistor and suppress the leakage current, a Fin Field Effect Transistor (Fin FET) is proposed i...

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Problems solved by technology

[0004] However, as the size of semiconductor devices continues to shrink, the manufacturing process of fin field effect transistors is challenged, and it is difficult to ensure the stable performance of fin field effect transistors

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