Light-emitting diode display and manufacturing method thereof
A technology of light-emitting diodes and manufacturing methods, applied in semiconductor/solid-state device manufacturing, electric solid-state devices, semiconductor devices, etc., can solve the problem that light cannot reach the external environment, and achieve the effect of increasing light extraction efficiency
Inactive Publication Date: 2017-03-15
MIKRO MESA TECH
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Due to total internal reflection relative to the external medium, some of the light generated in the active area of the LED may not reach the external environment
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[0047] In order to make the purpose, technical means and advantages of the embodiments of the present invention more clear, the technical means in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. For convenience of description, the sizes of different layers and regions are enlarged or reduced, so the sizes and ratios shown in the drawings do not necessarily represent actual sizes, nor do they reflect the proportional relationship of sizes.
[0048] figure 1 A schematic top view of the LED display 10 according to an embodiment of the present invention is shown. figure 2 for figure 1 The enlarged schematic diagram of the local structure. figure 1 and figure 2 An LED display 10 is shown. The LED display 10 includes a substrate 100 . The substrate 100 supports a pixel area 101 and a non-pixel area 102 outside the pixel area 101 . The pixel area 101 includes ...
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The invention discloses a light-emitting diode display and a manufacturing method thereof. The light-emitting device display includes a substrate, a first bottom electrode, a second bottom electrode, a micro light emitting device, a first isolation layer, an opposite electrode, and an encapsulation layer. The first and second bottom electrodes are disposed on the substrate. The micro light emitting device is disposed on the first bottom electrode and electrically connected to the first bottom electrode. The first isolation layer at least partially covers a side surface of the micro light emitting device, in which the first isolation layer has a refractive index n1, and the micro light emitting device has a refractive index ndevice, and ndevice>=n1. The opposite electrode is disposed on the micro light emitting device and electrically connected to the micro light emitting device and the second bottom electrode. The encapsulation layer at least covers the micro light emitting device and the first isolation layer. Therefore, according to the invention, the light-emitting diode display increases light extraction efficiency of micro light emitting devices.
Description
technical field [0001] The invention relates to a light emitting diode display, in particular to a manufacturing method of a light emitting diode display. Background technique [0002] In recent years, advances in light-emitting diode (Light-Emitting Diode, LED)-related technologies have significantly improved its illumination intensity and color fidelity. Due to these technological advancements, full-color light-emitting diode display elements are widely used. [0003] However, although the illumination intensity has been improved in recent years, the light extraction efficiency of LEDs in display elements is still limited by the external medium (air or cladding) due to total internal reflection. More specifically, the light extraction efficiency of a light emitting diode is defined as the ratio of the external quantum efficiency of the light emitting diode to the internal quantum efficiency of the light emitting diode. Due to total internal reflection with respect to the...
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IPC IPC(8): H01L27/12H01L21/77
CPCH01L27/1214H01L27/1259H01L25/075H01L33/56H01L33/62H01L33/14H01L33/44H01L2224/92244H01L2224/73267H01L2224/32225H01L2224/82H01L2224/24H01L2224/18
Inventor 陈立宜詹志辉张俊仪张珮瑜
Owner MIKRO MESA TECH