A Rapid Measuring Method for Thermal Steady-state Characteristics of gan HEMT
A measurement method and technology of thermal steady state, applied in the direction of measuring electricity, measuring devices, measuring electrical variables, etc., can solve the problems of low measurement efficiency and waiting time, avoid extra time, improve test efficiency, and reduce power consumption and the effect of the temperature difference range
Active Publication Date: 2019-02-01
CHENGDU HIWAFER SEMICON CO LTD
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[0004] The embodiments of the present invention provide a rapid measurement method for the thermal steady-state characteristics of GaN HEMTs, which solves the technical problem of low measurement efficiency in the prior art that requires waiting time when measuring the thermal steady-state characteristics of GaN HEMTs.
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[0017] Embodiments of the present invention provide a rapid measurement method for GaN HEMT thermal steady-state characteristics, which solves the technical problems of low measurement efficiency in the prior art that it takes waiting time when measuring GaN HEMT thermal steady-state characteristics.
[0018] In order to solve the above-mentioned technical problems, the technical solution of the present invention will be described in detail below in conjunction with the accompanying drawings and specific implementation methods.
[0019] A method for rapidly measuring thermal steady-state characteristics of GaN HEMT provided by an embodiment of the present invention, such as figure 1 As shown, including: S101, select multiple bias voltage values of the GaN HEMT device, measure and obtain the initial DC I-V characteristics of the GaN HEMT device; S102, calculate and obtain the corresponding multiple bias voltages according to the initial DC I-V characteristics of the GaN HEMT d...
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The invention relates to the field of semiconductor device manufacturing and more particularly to a method for fast measuring the thermal steady-state characteristic of a GaN HEMT. The method comprises the steps of: selecting a plurality of bias voltage values of a GaN HEMT device, measuring an initial DC I-V characteristic of the GaN HEMT device; based on the initial DC I-V characteristic of the GaN HEMT device, calculating the static power consumption corresponding to a plurality of bias voltages; arranging the static power consumption in an ascending order and arranging the corresponding bias voltage values in an ascending order according to the static power consumption, applying voltage to the GaN HEMT device to re-measure the thermal steady-state characteristic of the GaN HEMT device, thereby improving the measurement efficiency.
Description
technical field [0001] The invention relates to the field of semiconductor device manufacturing, in particular to a rapid measurement method for GaN HEMT thermal steady-state characteristics. Background technique [0002] GaN high electron mobility transistor (HEMT) has the advantages of very high two-dimensional electron gas (2-DEG) concentration, high saturation electron migration velocity and high power density, making GaN HEMT devices unmatched by GaAs devices in the field of microwave power applications The advantages. However, it is precisely because GaN HEMT has a very high power density, which is about 5 to 10 times that of GaAs devices, which makes the self-heating effect caused by power dissipation during operation very obvious. Therefore, during the testing process of GaN HEMT devices, The influence of self-heating effects must be considered. [0003] In the process of evaluating and modeling GaN HEMT device characteristics, it is necessary to measure the direct...
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IPC IPC(8): G01R31/26
CPCG01R31/2601
Inventor 陈勇波
Owner CHENGDU HIWAFER SEMICON CO LTD