Reaction chambers and semiconductor processing equipment

Abstract

The invention provides a reaction cavity and a semiconductor processing device. The reaction cavity comprises a technical assembly and an upper electrode arranged in the top of the technical assembly, an insulation ring which isolates the upper electrode from the technical assembly is arranged between the upper electrode and the technical assembly, a block piece is arranged on the technical assembly and positioned in the surrounding of the insulation ring, the block piece comprises a friction surface fit with the outer circumferential wall of the insulation ring, and when the upper electrode is disengaged from the technical assembly, a friction surface is generated between the friction surface and the outer circumferential wall of the insulation ring to block relative movement between the technical assembly and the upper electrode. According to the reaction cavity provided by the invention, when the upper electrode is started, the insulation ring is prevented from being disengaged from the technical assembly together with the upper electrode, and the insulation ring can be protected.

Description

technical field [0001] The invention relates to the field of semiconductor equipment manufacturing, in particular to a reaction chamber and semiconductor processing equipment. Background technique [0002] In the manufacturing process of integrated circuits, physical vapor deposition (Physical Vapor Deposition, hereinafter referred to as PVD) technology is usually used to deposit materials such as metal layers on wafers. [0003] figure 1 It is a structural schematic diagram of an existing PVD device. figure 2 It is a partial cross-sectional view of the existing PVD equipment. Such as figure 1 and figure 2 As shown, the PVD equipment includes a reaction chamber 10, in which a base 11 for carrying a wafer is arranged, and an upper electrode 15 is arranged on the top of the reaction chamber 10, and on the upper electrode 15, And a target 14 is provided at a position opposite to the base 11 . Moreover, in the reaction chamber 10, a process assembly 12 (comprising a back...

AI Technical Summary

Problems solved by technology

[0005] Since the above-mentioned reaction chamber is in a vacuum state, the pressure difference inside and outside the chamber is relatively large, causing the ceramic ring 13 and the sealing ring 16 to bond together due to long-term contact, which makes it possible for the ceramic ring 13 to be damaged when the upper electrode 15 is opened. Will be separated from the process component 12 together with the sealing ring 16, thus causing damage to the ceramic ring 12

Images