Hgcdte-material low-damage mixed-type dry method etching method

Abstract

The invention relates to the semiconductor field and especially relates to an hgcdte-material low-damage mixed-type dry method etching method. The method comprises the following steps of in a technology cavity of an inductively coupled plasma ICP, under a first setting technology environment, using setting radio frequency power to etch hgcdte material so as to acquire a contact hole; and in the technology cavity of the ICP, under a second setting technology environment, using a zero radio frequency to process the contact hole for preset time. In the technical scheme of the invention, a serious transoid problem of a P-type contact hole after a single-step dry method etching technology is solved; problems that anisotropy is poor, a undercutting condition is serious, corrosion depth repeatability is poor, uniformity is not good and so on in a wet method corrosion technology on aspect of a small size contact hole are avoided; surface damages introduced by etching are effectively reduced; and simultaneously a high etching rate and a good etching hole shape can be realized.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a low-damage hybrid dry etching method for mercury cadmium telluride materials. Background technique [0002] Infrared focal plane detection technology has significant advantages such as wide spectral response band, more ground target information can be obtained, and can work day and night. It is widely used in early warning detection, intelligence reconnaissance, damage effect assessment, and investigation, development and Management, weather forecast, geothermal distribution, earthquake, volcanic activity, space astronomical exploration and other military and civil fields. [0003] Fabrication of mercury cadmium telluride infrared detector chip is the core of infrared detection technology. The process of preparing chips mainly includes semiconductor device processes such as photolithography, wet chemistry, ion implantation, passivation, electrode deposition, and dry etching. The...

AI Technical Summary

Problems solved by technology

Wet etching and heat treatment are two commonly used post-processing technologies. The etching process combined with post-processing technology is called hybrid etching technology. However, wet etching has poor anisotropy and undercutting on small-sized contact holes. Serious, poor repeatability of corrosion depth and poor uniformity, etc., the heat treatment process will have a certain impact on the performance of the device itself. Therefore, both methods have certain limitations and cannot be effectively applied to HgCdTe focal plane devices. in preparation

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