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A preparation method of femn alloy nano film with strong exchange bias effect

A technology of alloy nano-film, applied in metal material coating process, vacuum evaporation plating, coating, etc., can solve the problems of controlling film size and thickness, complex alloy film process, unstable voltage and current under reaction conditions, etc. To achieve the effect of controlling the grain size, large exchange bias effect and reducing interface reaction

Inactive Publication Date: 2018-11-06
INNER MONGOLIA UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

There are certain defects in the preparation of alloy films by physical methods. The process of preparing alloy films by PLD method is complicated, and the size and thickness of film growth cannot be controlled during the growth process.
Although the operation process of alloy thin film prepared by magnetron sputtering is relatively simple, the size and thickness of the film cannot be controlled during the growth process.
The preparation of alloy thin films by MBE method is more complicated, the growth cycle is too long, and the size and thickness of the thin films cannot be controlled during the growth process.
[0005] Chemical methods to prepare thin films also have drawbacks
Due to the limitations of the preparation process, the first method of preparation cannot reach the nanometer size of the film; although the second method can effectively overcome the limitation of the film size, the voltage and current of the reaction conditions during the preparation of the film may be unstable, resulting in the preparation of nanomaterials. Inhomogeneity affects performance; the third process can also effectively overcome the limitation of film size, but because it usually has certain requirements for raw materials, products and reaction types, it cannot meet the requirements for preparing FeMn alloy nano film

Method used

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  • A preparation method of femn alloy nano film with strong exchange bias effect
  • A preparation method of femn alloy nano film with strong exchange bias effect
  • A preparation method of femn alloy nano film with strong exchange bias effect

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Embodiment 1

[0039] Preparation of FeMn alloy nano-films under annealing conditions, testing the hysteresis loops of FeMn alloy nano-films at temperatures of 70K, 100K, 150K, 200K, 250K, and 298K.

[0040] Adopt the following raw materials (its purity is more than 99.999%), and use the improved pre-sputtering half-hour target method to prepare nano-assembled FeMn alloy thin films;

[0041] The following is the specific method for preparing FeMn alloy nano film with strong exchange bias effect

[0042] 1.1): A FeMn alloy target with a purity of 99.999%, a thickness of 2mm, and a diameter of 50mm is used as a sputtering target, Ar is used as a sputtering gas with a purity of 99.999%, and (100) silicon with a thickness of 500μm and a thickness of 10mm*10mm sheet as a substrate.

[0043] 1.2): Soak the dust-free paper in step 1 in the absolute ethanol in step 1 for 10 seconds, wipe the impurities in the cluster condensation chamber with the dust-free paper soaked in absolute ethanol, and wipe...

Embodiment 2

[0052] Prepare FeMn alloy nano-films with strong exchange bias effect under annealing conditions, and test the hysteresis loops of FeMn alloy nano-films at temperatures of 5K, 15K, 20K, 25K, 30K, 40K, and 50K.

[0053] Adopt the following raw materials (more than 99.999% of its purity), use the improved pre-sputtering target material method for half an hour to prepare nano-assembled FeMn alloy thin films; consider that FeMn alloy nano-films are easily oxidized under high temperature conditions, adopt 400 under argon environment ℃ in-situ annealing for 15 minutes to prevent the composition of the FeMn alloy nano film from changing.

[0054] The specific method is:

[0055] 2.1): A FeMn alloy target with a purity of 99.999%, a thickness of 2mm, and a diameter of 50mm is used as a sputtering target, Ar is used as a sputtering gas with a purity of 99.999%, and (100) silicon with a thickness of 500μm and a thickness of 10mm*10mm sheet as a substrate.

[0056] 2.2): Soak the dust-...

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Abstract

The invention discloses a preparation method for Fe Mn alloy nanometer thin films with the high exchange biasing effect and belongs to the field of metal nanometer thin film preparation. Fe Mn alloy freedom clusters with the size being of the nanometer scale are prepared firstly, then the processes of collision, condensation and concretion are conducted in cavities of the clusters, and the Fe Mn alloy freedom clusters changes into Fe Mn alloy supporting clusters; and the Fe Mn alloy supporting clusters are attached to the surfaces of clean and smooth underlayers, assembling of the Fe Mn alloy clusters is completed on the surfaces of the underlayers, and thus the Fe Mn alloy nanometer thin films with nano-structures are obtained. According to the preparation method for the Fe Mn alloy nanometer thin films with the high exchange biasing effect, by adopting the cluster beam sedimentation method, the clusters are deposited into the Fe Mn alloy nanometer thin films in a soft landing mode, generation of inner stress is reduced, cluster assembling is achieved, a particular structure is obtained, and selection and control of the sizes and components of nanometer particles are achieved; and the prepared Fe Mn alloy nanometer thin films have the advantages of being high in exchange biasing effect, smooth and compact and high in density.

Description

technical field [0001] The invention relates to a preparation method of FeMn alloy nano film with strong exchange bias effect, belonging to the field of metal nano film preparation. Background technique [0002] The exchange bias effect was first discovered by Meikleijohn and Bean in the core-shell structure of Co in 1956. After the ferromagnetic (FM) / antiferromagnetic (AFM) interface is cooled in an external magnetic field from a temperature higher than the antiferromagnetic Neel temperature to a low temperature, the hysteresis loop of the ferromagnetic layer will deviate from the origin along the direction of the magnetic field, and the offset is determined by is called the exchange bias field. The exchange bias effect is widely used in the fields of low-power memory and spintronic devices, spin valve giant magnetoresistance devices and magnetic recording. The exchange bias effect mainly exists in the ferromagnetic (FM) / antiferromagnetic (AFM) bilayer film with FeMn allo...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/35C23C14/16
CPCC23C14/165C23C14/35
Inventor 赵世峰张冠群白玉龙李明浩
Owner INNER MONGOLIA UNIVERSITY
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