A preparation method of femn alloy nano film with strong exchange bias effect
A technology of alloy nano-film, applied in metal material coating process, vacuum evaporation plating, coating, etc., can solve the problems of controlling film size and thickness, complex alloy film process, unstable voltage and current under reaction conditions, etc. To achieve the effect of controlling the grain size, large exchange bias effect and reducing interface reaction
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Embodiment 1
[0039] Preparation of FeMn alloy nano-films under annealing conditions, testing the hysteresis loops of FeMn alloy nano-films at temperatures of 70K, 100K, 150K, 200K, 250K, and 298K.
[0040] Adopt the following raw materials (its purity is more than 99.999%), and use the improved pre-sputtering half-hour target method to prepare nano-assembled FeMn alloy thin films;
[0041] The following is the specific method for preparing FeMn alloy nano film with strong exchange bias effect
[0042] 1.1): A FeMn alloy target with a purity of 99.999%, a thickness of 2mm, and a diameter of 50mm is used as a sputtering target, Ar is used as a sputtering gas with a purity of 99.999%, and (100) silicon with a thickness of 500μm and a thickness of 10mm*10mm sheet as a substrate.
[0043] 1.2): Soak the dust-free paper in step 1 in the absolute ethanol in step 1 for 10 seconds, wipe the impurities in the cluster condensation chamber with the dust-free paper soaked in absolute ethanol, and wipe...
Embodiment 2
[0052] Prepare FeMn alloy nano-films with strong exchange bias effect under annealing conditions, and test the hysteresis loops of FeMn alloy nano-films at temperatures of 5K, 15K, 20K, 25K, 30K, 40K, and 50K.
[0053] Adopt the following raw materials (more than 99.999% of its purity), use the improved pre-sputtering target material method for half an hour to prepare nano-assembled FeMn alloy thin films; consider that FeMn alloy nano-films are easily oxidized under high temperature conditions, adopt 400 under argon environment ℃ in-situ annealing for 15 minutes to prevent the composition of the FeMn alloy nano film from changing.
[0054] The specific method is:
[0055] 2.1): A FeMn alloy target with a purity of 99.999%, a thickness of 2mm, and a diameter of 50mm is used as a sputtering target, Ar is used as a sputtering gas with a purity of 99.999%, and (100) silicon with a thickness of 500μm and a thickness of 10mm*10mm sheet as a substrate.
[0056] 2.2): Soak the dust-...
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