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Ultraviolet light detector based on porous GaN and preparation method of ultraviolet light detector

A technology of electrical detectors and ultraviolet light, applied in the field of photodetectors, can solve problems such as low responsivity and detectability, and unsatisfactory

Inactive Publication Date: 2017-05-10
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Problems solved by technology

[0007] Although the GaN material has a high light absorption coefficient, its quantum efficiency, responsivity and detectability are still low from the performance of GaN-based photodetectors reported so far, which cannot meet the needs of practical applications, especially in weak ultraviolet light. The need for light detection

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Embodiment Construction

[0034] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0035] figure 1 It is a schematic diagram of a longitudinal section structure based on a porous gallium nitride ultraviolet photodetector according to an embodiment of the present invention, such as figure 1 As shown, the ultraviolet photodetector based on porous gallium nitride includes: a substrate 10 , a buffer layer 11 , an n-type porous gallium nitride layer 12 and a pair of electrodes 13 from bottom to top.

[0036] The material of the substrate 10 is sapphire, silicon, silicon carbide (SiC) or glass, and the structure of the substrate 10 is plane or graphic. In the embodiment of the present invention, silicon carbide is selected as the substrate 10 of the ultraviolet photodetector.

[0037] The buffer layer 11 is ...

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Abstract

The invention provides an ultraviolet light detector of porous GaN. The ultraviolet light detector comprises a substrate, a buffer layer, an n-type porous GaN layer and a pair of electrodes, wherein the buffer layer is arranged on the substrate, the n-type porous GaN layer is arranged on the buffer layer, and the pair of electrodes are respectively arranged on the porous GaN layer in a lamination way. Moreover, the invention also provides a preparation method of the ultraviolet light detector of the porous GaN. The preparation method comprises the steps of growing the buffer layer on the substrate; fabricating the n-type porous GaN layer on the buffer layer; and growing the pair of electrodes on the n-type porous GaN layer. With the adoption of a porous GaN structure, a large amount of surface state density will be generated at a Schottky junction interface formed from the GaN and the electrodes, the barrier height of the junction is reduced, and the light effect is improved.

Description

technical field [0001] The invention relates to the technical field of photodetectors, in particular to a porous gallium nitride (GaN)-based ultraviolet photodetector and a preparation method. Background technique [0002] The ultraviolet light detector is the core component of the ultraviolet early warning system and the ultraviolet imaging system, and gallium nitride is an excellent ultraviolet photodetector material. In the field of ultraviolet detection, the material that can be applied to the blind band of visible light (less than 380nm) is mainly silicon (Si). [0003] The band gap of Si is about 1.12eV, and its photoresponse band covers the bands from ultraviolet light to visible light to near-infrared light. Therefore, when the Si-based detector is used for ultraviolet light detection, its photoelectric response to visible light and near-infrared light will become a strong background noise. In order to exclude this background noise, Si-based photodetectors used for...

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Application Information

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IPC IPC(8): H01L31/0304H01L31/108H01L31/18
CPCH01L31/03044H01L31/1085H01L31/1856Y02P70/50
Inventor 刘磊杨超赵丽霞
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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