Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

An integrated photoelectric storage device based on phase-change nanowires and its testing method

An integrated optical and testing method technology, applied in the field of nano-devices, to achieve the effects of good reliability, low power, and low melting point

Active Publication Date: 2019-10-25
NINGBO UNIV
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, there are no relevant research reports on memory devices that can simultaneously operate in the electrical and optical domains at home and abroad.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • An integrated photoelectric storage device based on phase-change nanowires and its testing method
  • An integrated photoelectric storage device based on phase-change nanowires and its testing method
  • An integrated photoelectric storage device based on phase-change nanowires and its testing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] in Si 3 N 4 / SiO 2 / Si substrates are prepared in two steps by electron beam-exposure etching process, that is, first on Si 3 N 4 / SiO 2 / Si to prepare the electrodes and alignment marks, the electrodes are Cr(10nm) / Au(90nm) structure, the total thickness is 100nm, and then the waveguide and vertical grating coupler are prepared by electron beam-exposure etching process again, and the electrodes are distributed in both sides of the waveguide. Finally, the GeTe nanowires were transferred onto Cr / Au electrodes, suspended vertically just above the waveguide. The waveguide width of the device is 1.3μm, the thickness is 200nm, the distance between the electrode and the waveguide is 300nm, and the short and long sides of the trapezoidal electrode are 4 and 20μm, respectively. The grating period of the vertical coupler is 1.14-1.16 μm, the fill factor is 0.88, and its coupling efficiency is about 27%. The length of the GeTe nanowire is about 26 μm, the diameter is 700 n...

Embodiment 2

[0025] Same as Example 1, the difference lies in that the waveguide suspended from the device has a width of 1.4 μm and a thickness of 300 nm, the distance between the electrode and the waveguide is 500 nm, and the short side of the trapezoidal electrode is 5 μm. The GeTe nanowires have a length of about 3 μm and a diameter of 300 nm. The laser write pulse wavelength is 1.56μm, the power consumption is 5.2mW, and the detection light wavelength is 1.57μm.

Embodiment 3

[0027] Same as embodiment 1, the difference lies in that the distance between the electrode and the waveguide is 1 μm, and the short side of the trapezoidal electrode is 5 μm. The GeTe nanowires have a length of about 12 μm and a diameter of 400 nm. Focused ion beam (FIB) was used to plate Pt at the contact between the nanowire and the electrode to improve the ohmic contact between the nanowire and the electrode. At this time, the resistance of the device in the crystalline state was 1.2KΩ.

[0028] 2. Analysis of Experimental Results

[0029] figure 1 It is an optical microscope picture of the device of the present invention. The device is mainly composed of Si 3 N 4 The waveguide, the Cr / Au electrodes on both sides of the waveguide, the vertical grating coupler connected to both ends of the waveguide and the GeTe nanowires connected to the two electrodes. The diameter of the GeTe nanowire is about 700nm, the length is about 26μm, and its direction is perpendicular to th...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses an integrated type photoelectric storage device based on phase-change nano wires and a testing method thereof. The integrated type photoelectric storage device is characterized by comprising a waveguide, wherein the two ends of the waveguide are respectively connected with a grating vertical coupler; electrodes are symmetrically distributed at the two sides of the waveguide; the phase-change nano wires are arranged above the waveguide and are vertical to the waveguide; and the phase-change nano wires are connected with the two electrodes to form ohmic contact. The integrated type photoelectric storage device and the testing method disclosed by the invention have the advantages that the simultaneous operation in an electric domain and a frequency domain can be realized, multi-stage storage can be realized by utilizing a photoelectric hybrid mode, the transient process of the phase-change nano wires can be monitored and the phase-change speed can be tested.

Description

technical field [0001] The invention relates to the field of nanometer devices used for photoelectric hybrid storage, in particular to an integrated photoelectric storage device based on phase-change nanowires and a testing method thereof. Background technique [0002] Nanophotonic integrated components combined with electronic integrated devices can construct on-chip multifunctional optoelectronic circuits for efficient data storage, communication, and processing in a single on-chip system. This multifunctional on-chip integrated optoelectronic device with smaller size and power consumption allows simultaneous operation in the electrical and optical domains, which in turn can process optoelectronic mixed-mode data, facilitating the management of large amounts of information and reducing the complexity of multifunctional integration . The performance of such optoelectronic hybrid devices mainly depends on the multifunctional materials with both electrical and optical respon...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G11C11/42
CPCG11C11/42
Inventor 吕业刚张巍沈祥王国祥徐培鹏
Owner NINGBO UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com