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Semiconductor device structure and method for forming the same

A device structure, semiconductor technology, applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, etc.

Active Publication Date: 2017-05-24
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, while existing semiconductor fabrication processes are generally adequate for their intended purposes, they are not entirely satisfactory in all respects as devices continue to be scaled down

Method used

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  • Semiconductor device structure and method for forming the same
  • Semiconductor device structure and method for forming the same
  • Semiconductor device structure and method for forming the same

Examples

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Embodiment Construction

[0029] The following disclosure provides many different embodiments or examples for implementing different features of the invention. Specific examples of components and arrangements are described below to simplify the present disclosure. Of course, these are examples only and are not intended to limit the invention. For example, in the following description, forming a first component over or on a second component may include an embodiment in which the first component and the second component are formed in direct contact, and may also include an embodiment in which a first component may be formed between the first component and the second component. Additional components such that the first and second components may not be in direct contact. In addition, the present invention may repeat reference numerals and / or characters in various instances. This repetition is for the sake of simplicity and clarity and does not in itself indicate a relationship between the various embodim...

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PUM

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Abstract

A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate. The semiconductor device structure includes a metal gate electrode structure over the semiconductor substrate. The semiconductor device structure includes an insulating layer over the semiconductor substrate and surrounding the metal gate electrode structure. The semiconductor device structure includes a first metal nitride layer over a first top surface of the metal gate electrode structure and in direct contact with the metal gate electrode structure. The first metal nitride layer includes a nitride material of the metal gate electrode structure. The invention further provides a method for forming the semiconductor device structure.

Description

technical field [0001] The present invention generally relates to the field of semiconductors, and more particularly, to a semiconductor device structure and a method for forming the same. Background technique [0002] Semiconductor devices are used in various electronic devices such as personal computers, cell phones, digital cameras, and other electronic devices. Semiconductor devices are typically fabricated by sequentially depositing an insulating or dielectric layer, a conductive layer, and a layer of semiconducting material over a semiconductor substrate; and then using photolithography to pattern the various material layers to form circuit components on the semiconductor substrate and components. [0003] However, while existing semiconductor fabrication processes are generally adequate for their intended purposes, they are not entirely satisfactory in all respects as devices continue to be scaled down. Contents of the invention [0004] According to one aspect of...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78H01L29/423H01L21/336H01L21/28
CPCH01L21/28518H01L21/76814H01L21/76826H01L21/76829H01L21/76831H01L21/76832H01L21/76834H01L21/76843H01L21/76855H01L23/485H01L29/401H01L29/45H01L29/4966H01L29/665H01L29/66545H01L29/7848H01L21/02247H01L21/02252H01L21/02255H01L29/42364H01L29/518H01L29/78
Inventor 叶启瑞王智麟郭康民
Owner TAIWAN SEMICON MFG CO LTD