Light-emitting diode and manufacture method thereof

A technology of light-emitting diodes and electrodes, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of high brightness of light-emitting diode displays and achieve the effect of increasing current density

Active Publication Date: 2017-05-24
MIKRO MESA TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Otherwise, the brightness of th

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  • Light-emitting diode and manufacture method thereof
  • Light-emitting diode and manufacture method thereof
  • Light-emitting diode and manufacture method thereof

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Embodiment Construction

[0071] A number of implementations of the present invention will be disclosed below with the accompanying drawings. For the sake of clarity, many practical details will be described together in the following description. However, it should be understood that these practical details should not be used to limit the scope of the present invention. That is, in some embodiments of the present invention, these practical details are unnecessary. In addition, for the sake of simplifying the drawings, some well-known and commonly used structures and elements will be shown in a simple and schematic manner in the drawings.

[0072] Embodiments of the present summary describe miniature semiconductor elements and methods of forming arrays of miniature semiconductor elements, such as miniature light emitting diodes, for transfer to a receiving substrate. For example, the receiving substrate may be, but not limited to, a display substrate.

[0073] In different implementation manners, rela...

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Abstract

The invention discloses a light-emitting diode and a manufacture method thereof. The light-emitting diode (LED) includes a first type semiconductor layer, a second type semiconductor layer, a current controlling structure, a first electrode, and a second electrode. The second type semiconductor layer is joined with the first type semiconductor layer. The current controlling structure is joined with the first type semiconductor layer, and the current controlling structure has at least one current-injecting zone therein. The first electrode is electrically coupled with the first type semiconductor layer through the current-injecting zone of the current controlling structure. The second electrode is electrically coupled with the second type semiconductor layer. The current-injecting zone can confine the contact area between the first type semiconductor layer and the first electrode, such that the current density that goes into the LED can be increased.

Description

technical field [0001] The content of the present invention relates to a light emitting diode and a manufacturing method thereof. Background technique [0002] In recent years, light-emitting diodes (light-emitting diodes; LEDs) have been commonly used in general household and commercial lighting applications. As a light source, light-emitting diodes have many advantages, including low energy consumption, long life, small size, and fast switching speed. Therefore, traditional lighting sources, such as incandescent lamps, have been gradually replaced by light-emitting diode light sources. In light-emitting diodes, when electrons and holes recombine across the semiconductor bandgap, the recombination energy is emitted in the form of photons and produces light. This recombination mechanism is the so-called radiative recombination. [0003] In an LED display using an LED array, in order to provide an appropriate brightness, eg, 500 nits (nit) to 3000 nits, the emitted energy o...

Claims

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Application Information

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IPC IPC(8): H01L33/14H01L33/00
CPCH01L33/005H01L33/14H01L33/007H01L33/0075H01L33/025H01L33/145
Inventor 陈立宜张珮瑜詹志辉张俊仪林师勤李欣薇
Owner MIKRO MESA TECH
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