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Pulling-method crystal growing furnace capable of effectively preventing furnace inside pollution

A technology of crystal growth furnace and pulling method, which is applied in the directions of crystal growth, single crystal growth, self-melting liquid pulling method, etc., and can solve the problems of polluting growth crystal materials and single crystal material pollution, etc.

Pending Publication Date: 2017-05-31
KUNMING AUTO MECH & ELE
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The most fatal defect in the traditional crystal growth equipment of the pulling method is the pollution of the growth environment to the grown single crystal material. The typical features are: the crystal growth chamber is large, and the outside is equipped with water cooling. It is carried out in a sealed chamber, and the crystal growth material is placed in the melting pot. Most of the heating methods are heating with a heating furnace jacket (there are also resistance wire heating), including heat preservation jackets and heat insulation materials, etc., and are all placed inside the chamber of the furnace body. That is, in the same chamber as the growth crystal material
In a long-term high-temperature environment, heating furnace jackets, insulation jackets, heating materials, and thermal insulation materials will all produce volatiles, thereby contaminating the growth crystal materials, and the purity of the grown single crystals should reach 99.99995-99.99999%, forming a natural contradiction. The requirement is very pure, but there are always pollutants during the growth process. The ideal growth environment for crystal growth is zero pollution. Therefore, to grow high-purity target crystals, preventing pollution in the furnace is the key to overcoming this problem. It is necessary to develop A pulling method crystal growth furnace capable of effectively preventing pollution in the furnace body

Method used

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  • Pulling-method crystal growing furnace capable of effectively preventing furnace inside pollution
  • Pulling-method crystal growing furnace capable of effectively preventing furnace inside pollution

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Embodiment Construction

[0009] The present invention will be further described below in conjunction with the accompanying drawings and embodiments, but the present invention is not limited in any way.

[0010] Such as Figure 1~2 The pull method crystal growth furnace shown that can effectively prevent pollution in the furnace includes a furnace frame 1 and a furnace body 5, a temperature measuring device 8 is arranged on the furnace body 5, and a furnace body seat 4 is sealed at the bottom of the furnace body 5 , the furnace body seat 4 is fixedly arranged on the furnace frame 1, the furnace body seat 4 is provided with a melting pot support rod 2, and the melting pot support rod 2 is provided with a melting pot 3; the furnace body 5 is sealed at the top of the furnace body On the cover 6, a crystal lifting rod 7 opposite and coaxial to the melting pot support rod 2 is provided, and the lower end of the crystal lifting rod 7 is provided with a seed crystal clamping device 16; the outside of the furn...

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Abstract

The invention discloses a pulling-method crystal growing furnace capable of effectively preventing furnace inside pollution. The crystal growing furnace comprises a furnace rack and a furnace body, wherein a temperature measuring device is arranged on the furnace body, a furnace body seat is arranged at the bottom of the furnace body in a sealed manner and is fixedly arranged on the furnace rack, a melting pot supporting rod is arranged on the furnace body seat, and a melting pot is arranged on the melting pot supporting rod; a furnace body cover is arranged at the top of the furnace body in a sealed manner, a crystal pulling rod which is opposite to the melting pot supporting rod and is coaxial with the melting pot supporting rod is arranged on the furnace body cover, and a seed crystal clamping device is arranged at the lower end of the crystal pulling rod; a heating furnace jacket is arranged outside the furnace body corresponding to a melting pot area, a heat-preserving sleeve is arranged above the heating furnace jacket, and a heat-insulated sleeve is arranged outside the heat-preserving sleeve. According to the pulling-method crystal growing furnace, through outwards shifting heating and temperature control components and a water-cooled furnace body component, the problem of furnace inside pollution caused by the generation of volatiles in the furnace body at high temperatures is greatly reduced, the improvement and control on crystal growing working condition environments in the furnace are facilitated, and the quality of crystals is improved and stabilized.

Description

technical field [0001] The invention belongs to the technical field of pulling and growing crystals, and in particular relates to a pulling method crystal growth furnace which can effectively prevent pollution in the furnace. Background technique [0002] The method of pulling and growing crystals from the melt is the crystal growth method pioneered by Czochralski in 1918, referred to as the CZ method. The most fatal defect in the traditional crystal growth equipment of the pulling method is the pollution of the growth environment to the grown single crystal material. The typical features are: the crystal growth chamber is large, and the outside is equipped with water cooling. It is carried out in a sealed chamber, and the crystal growth material is placed in the melting pot. Most of the heating methods are heating with a heating furnace jacket (there are also resistance wire heating), including heat preservation jackets and heat insulation materials, etc., and are all place...

Claims

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Application Information

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IPC IPC(8): C30B15/00
CPCC30B15/00
Inventor 李照存
Owner KUNMING AUTO MECH & ELE
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