Pulling-method crystal growing furnace capable of effectively preventing furnace inside pollution

Abstract

The invention discloses a pulling-method crystal growing furnace capable of effectively preventing furnace inside pollution. The crystal growing furnace comprises a furnace rack and a furnace body, wherein a temperature measuring device is arranged on the furnace body, a furnace body seat is arranged at the bottom of the furnace body in a sealed manner and is fixedly arranged on the furnace rack, a melting pot supporting rod is arranged on the furnace body seat, and a melting pot is arranged on the melting pot supporting rod; a furnace body cover is arranged at the top of the furnace body in a sealed manner, a crystal pulling rod which is opposite to the melting pot supporting rod and is coaxial with the melting pot supporting rod is arranged on the furnace body cover, and a seed crystal clamping device is arranged at the lower end of the crystal pulling rod; a heating furnace jacket is arranged outside the furnace body corresponding to a melting pot area, a heat-preserving sleeve is arranged above the heating furnace jacket, and a heat-insulated sleeve is arranged outside the heat-preserving sleeve. According to the pulling-method crystal growing furnace, through outwards shifting heating and temperature control components and a water-cooled furnace body component, the problem of furnace inside pollution caused by the generation of volatiles in the furnace body at high temperatures is greatly reduced, the improvement and control on crystal growing working condition environments in the furnace are facilitated, and the quality of crystals is improved and stabilized.

Description

technical field [0001] The invention belongs to the technical field of pulling and growing crystals, and in particular relates to a pulling method crystal growth furnace which can effectively prevent pollution in the furnace. Background technique [0002] The method of pulling and growing crystals from the melt is the crystal growth method pioneered by Czochralski in 1918, referred to as the CZ method. The most fatal defect in the traditional crystal growth equipment of the pulling method is the pollution of the growth environment to the grown single crystal material. The typical features are: the crystal growth chamber is large, and the outside is equipped with water cooling. It is carried out in a sealed chamber, and the crystal growth material is placed in the melting pot. Most of the heating methods are heating with a heating furnace jacket (there are also resistance wire heating), including heat preservation jackets and heat insulation materials, etc., and are all place...

AI Technical Summary

Problems solved by technology

The most fatal defect in the traditional crystal growth equipment of the pulling method is the pollution of the growth environment to the grown single crystal material. The typical features are: the crystal growth chamber is large, and the outside is equipped with water cooling. It is carried out in a sealed chamber, and the crystal growth material is placed in the melting pot. Most of the heating methods are heating with a heating furnace jacket (there are also resistance wire heating), including heat preservation jackets and heat insulation materials, etc., and are all placed inside the chamber of the furnace body. That is, in the same chamber as the growth crystal material

In a long-term high-temperat

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