Thin film diode and cascaded structure thereof

A thin-film diode and series structure technology, which is applied in the direction of electrical components, electric solid devices, circuits, etc., can solve the problems of forward bias resistance and reverse leakage current suppression structure complex, so as to improve the suppression effect, reduce leakage current, The effect of simplifying the functional structure

Active Publication Date: 2017-05-31
JIAXING AIHE ELECTRONICS TECH CO LTD
View PDF2 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The invention provides a thin-film diode, which solves the technical problem of complex forward bias resistance and reverse leakage current suppression structure of the thin-film diode in the prior art

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Thin film diode and cascaded structure thereof
  • Thin film diode and cascaded structure thereof
  • Thin film diode and cascaded structure thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0049] see figure 1 and figure 2 A thin film diode provided in this embodiment includes: a thin film diode body 100 and a field plate 150 located outside the low-doped drift region 120 of the thin film diode body; an insulator 140 is provided between the field plate 150 and the thin film diode body 100 .

[0050] Specifically, the field plate 150 is connected to the anode 130 of the thin film diode body; forming a forward bias resistor and a reverse leakage current suppression circuit structure.

[0051]Wherein, in a forward bias state, the positive power applied to the anode 130 biases the field plate 150 ; thereby suppressing the forward bias resistance. In the reverse bias state, a negative voltage applied to the cathode 110 biases the field plate 150; thereby suppressing reverse leakage current. That is, the control source of the field plate 150 is set to the thin film diode body 100, and its suppression operation is consistent with the state of the thin film diode body...

Embodiment 2

[0054] see image 3 , on the basis of Embodiment 1, this embodiment makes a design for the arrangement structure of the field plate.

[0055] Specifically, the field plate includes: a first field plate 250 and a second field plate 260 located on the upper and lower sides of the low-doped drift region 220 of the thin film diode body.

[0056] Wherein, the first field plate 250 and the second field plate 260 are respectively connected to the anode 230 of the thin film diode body. An insulator 240 is disposed between the first field plate 250 , the second field plate 260 and the thin film diode body.

[0057] In the forward bias state, the positive power applied to the anode 230 biases the first field plate 250 and the second field plate 260; in the reverse bias state, the negative voltage applied to the cathode 210 biases The first field plate 250 and the second field plate 260 . The suppression effect of forward bias resistance and directional leakage current is further enha...

Embodiment 3

[0059] see Figure 4 and Figure 5 , on the basis of the second embodiment, the structure of the first field plate is changed.

[0060] Specifically, the first field plate 350 includes: a top field plate located on the top side of the low-doped drift region of the thin film diode body 300 and side field plates located on the left and right sides of the low-doped drift region of the thin film diode body ; That is, the first field plate 350 is arranged in a C-shaped structure, buckled on the thin film diode body 300 , and an insulator 340 is arranged between them.

[0061] The side field plate is connected to the top field plate and connected to the anode 330 of the thin film diode body 300 .

[0062] Wherein, in the forward bias state, the positive power applied to the anode 330 biases the top field plate, the side field plate and the second field plate 360; in the reverse bias state, the positive power applied to The negative voltage at cathode 310 biases the top field plat...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention belongs to the technical field of thin film semiconductor diodes, and discloses a thin film diode. The thin film diode comprises a thin film diode body and a field plate which is positioned on a low-doped drift region of the thin film diode body, wherein the field plate is connected with a positive pole of the thin film diode body; the filed plate is biased by a positive power supply applied to the positive pole in a forward bias state; and the field plate is biased by a negative voltage applied to a negative pole in a reverse bias state. The thin film diode provided by the invention has good performances for inhibiting forward bias resistance and reverse leakage current, and is simple in structure.

Description

technical field [0001] The invention relates to the technical field of thin film semiconductor diodes, in particular to a thin film diode and its series structure. Background technique [0002] Thin-film semiconductor devices are usually composed of polycrystalline or amorphous thin-film semiconductor materials, which are widely used in semiconductor integrated circuits. Because thin-film semiconductor devices are isolated from each other, they are easy to integrate and can be used as an independent and complete thin-film circuit or as a part of a traditional crystal semiconductor circuit. However, due to the amorphous material characteristics of polycrystalline or amorphous, coupled with non-ideal boundary properties, the conductivity of thin-film semiconductor devices is usually inferior to that of equivalent crystalline semiconductor devices. A typical example is thin film diodes, which usually have higher forward bias resistance and higher reverse leakage current than c...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/40H01L29/868H01L25/03
CPCH01L25/03H01L29/402H01L29/868
Inventor 韦韬
Owner JIAXING AIHE ELECTRONICS TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap