Stress measurement method of thin-film material elasticity modulus changing caused by generalized load
An elastic modulus, thin film material technology, applied in the field of multi-field coupling, to achieve the effect of accurate stress measurement results
Active Publication Date: 2017-06-13
TIANJIN UNIV
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Problems solved by technology
In short, the current variable elastic modulus value has not been applied to stress measurement, so there is an urgent need for a stress measurement method that considers the change of the elastic modulus of the thin film material with the generalized load, and the commonly used Stoney formula is modified to calculate the substrate-film structure more accurately. stress
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[0052] First, the bending deformation response of the bilayer heterostructure under generalized loading needs to be known. It is currently known that in the field of electrochemistry, the elastic modulus of the silicon electrode of a lithium-ion battery changes significantly with the concentration of lithium intercalation under the action of electrochemical generalized load-lithium intercalation concentration, which is caused by the silicon composite electrode under the action of electrochemical load. Taking the mismatched strain to cause the electrode to bend and deform as an example, the specific application process of the stress measurement method proposed by the present invention and its importance to the accuracy of stress are illustrated. It should be noted that this embodiment is illustrative rather than restrictive, and does not limit the protection scope of the present invention.
[0053] The silicon composite electrode is composed of copper foil and electrode materia...
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Abstract
The present invention provides a stress measurement method of a thin-film material elasticity modulus changing caused by a generalized load. Aiming at a substrate-thin film double-layer heterostructure, a stress measurement method of thin-film material elasticity modulus E2 with changing of the generalized load is performed in the condition of a substrate material elasticity modulus E1 is known and unchanged. The method comprises: 1, based on deformation curvature based on the generalized load, representing the thin-film material elasticity modulus with changing of the generalized load under the action of the generalized load; and 2, based on the deformation curvature and the obtained thin-film material elasticity modulus, representing the double-layer heterostructure substrate stress and thin film stress considering changing of the thin-film material elasticity modulus caused by the generalized load. The thermal-stress analysis is popularized to the double-layer heterostructure stress measurement in the multi-field coupling generalized load, and compared to the current common Stoney format presuming the thin-film material elasticity modulus as a constant, the calculation of the substrate stress and the thin film stress are more accurate so as to provide reference basis for analysis of damage and fracture of materials and structure optimization design.
Description
technical field [0001] The invention belongs to the field of multi-field coupling such as biology, electricity, chemistry, heat, and force, and specifically relates to a stress measurement method for the change of the elastic modulus of a film material caused by a generalized load in a multilayer heterogeneous structure. Background technique [0002] At present, substrate-thin film multilayer heterostructures are widely used in electronic packaging, flexible electronic devices, and micro / nano electronic machinery systems. Under the generalized loading of multi-field coupling, the multilayer structure produces uncoordinated misfit strain and stress. Not only is the stress measurement of multilayer structures used as sensors essential, but the structural debonding and fracture caused by stress seriously affect the service life and life of devices and systems, so as to accurately measure the substrate-thin film multilayer heterostructure in multi-field coupling. Stress in the ...
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IPC IPC(8): G01L1/04G01N3/06G01N3/40
CPCG01L1/04G01N3/06G01N3/40
Inventor 亢一澜谢海妹宋海滨石宝琴
Owner TIANJIN UNIV