Detection method for crystalline silicon solar cell luminous decay resistance

A technology of solar cell and detection method, which is applied in semiconductor/solid-state device testing/measurement, circuits, electrical components, etc., can solve the problems of unfavorable solar cell production process, long test time, high energy consumption, etc., and achieve rapid light decay. Test, reduce test energy consumption, the effect of low energy consumption

Inactive Publication Date: 2017-06-30
CHANGZHOU SHICHUANG ENERGY CO LTD
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Problems solved by technology

At present, the conventional light attenuation test method is light, the test time is long (generally greater than 6h), and the energ

Method used

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[0021] The specific implementation of the present invention will be further described below in conjunction with examples. The following embodiments are only used to illustrate the technical solutions of the present invention more clearly, and cannot be used to limit the protection scope of the present invention.

[0022] The technical scheme of the present invention is:

[0023] A method for detecting the anti-light decay ability of crystalline silicon solar cells includes the following steps:

[0024] 1) Perform a measurement of the conversion efficiency of the crystalline silicon solar cell to obtain the primary efficiency value η 1 ;

[0025] 2) Under certain temperature conditions, inject current into the crystalline silicon solar cell by means of electrical injection;

[0026] 3) Perform a secondary measurement of the conversion efficiency of the crystalline silicon solar cell after the electric injection, and obtain the secondary efficiency value η 2 ;

[0027] 4) Calculate the ac...

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Abstract

The invention discloses a detection method for crystalline silicon solar cell luminous decay resistance. The detection method comprises the following steps that 1) primary measurement of the conversion efficiency is performed on a crystalline silicon solar cell; 2) current is injected into the crystalline silicon solar cell through the mode of electric injection under the certain temperature condition; 3) secondary measurement of the conversion efficiency is performed on the crystalline silicon solar cell after electric injection; 4) the actual luminous decay rate of the crystalline silicon solar cell is calculated; and 5) the actual luminous decay rate is compared with the preset luminous decay rate of the accepted product, and if the actual luminous decay rate is not greater than the luminous decay rate of the accepted product, the crystalline silicon solar cell is judged to be the accepted product having the qualified luminous decay resistance; and if the actual luminous decay rate is greater than the luminous decay rate of the accepted product, the crystalline silicon solar cell is judged to be the defective product having the unqualified luminous decay resistance. Luminous decay testing can be rapidly performed on the crystalline silicon solar cell under the condition of low energy consumption so that the objective of monitoring the production technology in real time can be achieved.

Description

technical field [0001] The invention relates to a detection method for the anti-light attenuation ability of crystalline silicon solar cells. Background technique [0002] With the development of photovoltaic technology, the conversion efficiency of polysilicon solar cells is getting higher and higher, and the impact of light-induced attenuation (referred to as light attenuation) on solar cells is also increasing. The terminal market has strict requirements on the light attenuation rate of polysilicon solar cells. Therefore, in the production process of polycrystalline silicon solar cells, it is necessary to carry out real-time testing on the anti-light decay ability of finished crystalline silicon solar cells in order to achieve the purpose of monitoring the production process. At present, the conventional light attenuation test method is light, and the test time is long (generally greater than 6h), and the energy consumption is relatively large (generally greater than 100W...

Claims

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Application Information

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IPC IPC(8): H01L21/66
CPCH01L22/12Y02P70/50
Inventor 任常瑞符黎明
Owner CHANGZHOU SHICHUANG ENERGY CO LTD
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